Search results for "GATE"
showing 10 items of 1811 documents
Due note etimologiche circostanziali circa il Ms.II.D.54 (BNN) attribuito a Baffi
2019
Within the investigations on the attribution of some manuscripts to the famous philologist P. Baffi and now kept at the National Library of Naples (BNN), this brief contribution investigates in detail some of the passages contained in Ms.II.D.54 (f. 234r et f. 325r), in order to understand its meaning and to evaluate and validate its attributing hypotheses.
FPGA based digital lock-in amplifier for fNIRS systems
2018
Lock-In Amplifiers (LIA) represent a powerful technique helping to improve signals detectability when low signal to noise ratios are experienced. Continuous Wave functional Near Infrared Spectroscopy (CW-fNIRS) systems for e-health applications usually suffer of poor detection due to the presence of strong attenuations of the optical recovering path and therefore small signals are severely dipped in a high noise floor. In this work a digital LIA system, implemented on a Zynq® Field Programmable Gate Array (FPGA), has been designed and tested to verify the quality of the developed solution, when applied in fNIRS systems. Experimental results have shown the goodness of the proposed solutions.
Enabling partially reconfigurable IP cores parameterisation and integration using MARTE and IP-XACT
2012
International audience; This paper presents a framework which facilitates the parameterization and integration of IP cores into partially reconfigurable SoC platforms, departing from a high-level of abstraction. The approach is based in a Model-Driven Engineering (MDE) methodology, which exploits two widely used standards for Systems-on-Chip specification, MARTE and IP-XACT. The presented work deals with the deployment level of the MDE approach, in which the abstract components of the platform are first linked to the lower level IP-XACT counterparts. At this phase, information for parameterization and integration is readily available, and a synthesizable model can be obtained from the gener…
A fully-digital realtime SoC FPGA based phase noise analyzer with cross-correlation
2017
We report on a fully-digital and realtime operation of a phase noise analyzer using modern digital techniques with cross-correlation. With the advent of system on chip field-programmable gate arrays (SoC FPGAs) embedding hard core central processing unit, coprocessor and FPGA onto a single integrated circuit, the building of sensitive analysis devices for Time & Frequency research is made accessible at virtually no cost and benefits from reconfigurability. Used with high-speed digitizers we have successfully implemented a four-channel system whose preliminary results at 10 MHz shows a residual white noise floor < −185 dBrad2/Hz up to 5 MHz off the carrier, and flicker < −127 dBrad2/Hz using…
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment
2018
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …
Partial discharge of gel insulated high voltage power modules subjected to unconventional voltage waveforms
2016
Performances and duration of the new generation of high voltage power electronic components are dependent on dielectric materials aim to insulating their internal terminals. The presence of defects, some due to faults generated during the manufacturing process, but also due to the internal design of layers and connections, can cause local enhancements of electric field and consequently possible activity of partial discharges phenomena or other effects (aging, tracking) that may result in reduction of device reliability. Furthermore, the usage of unconventional voltage waveforms, like square waves or pulse width modulated waves, additionally increases the electrical aging of the insulation s…
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Run-time scalable NoC for FPGA based virtualized IPs
2017
The integration of virtualized FPGA-based hardware accelerators in a cloud computing is progressing from time to time. As the FPGA has limited resources, the dynamic partial reconfiguration capability of the FPGA is considered to share resources among different virtualized IPs during runtime. On the other hand, the NoC is a promising solution for communication among virtualized FPGA-based IPs. However, not all the virtualized regions of the FPGA will be active all the time. When there is no demand for virtualized IPs, the virtualized regions are loaded with blank bitstreams to save power. However, keeping active the idle components of the NoC connecting with the idle virtualized regions is …
Laser control in open molecular systems: STIRAP and Optimal Control
2007
We examine the effect of dissipation on the laser control of a process that transforms a state into a superposed state. We consider a two-dimensional double well of a single potential energy surface. In the context of reactivity, the objective of the control is the localization in a given well, for instance the creation of an enantiomeric form whereas for quantum gates, this control corresponds to one of the transformation of the Hadamard gate. The environment is either modelled by coupling few harmonic oscillators (up to five) to the system or by an effective interaction with an Ohmic bath. In the discrete case, dynamics is carried out exactly by using the coupled harmonic adiabatic channe…
A Fully Conjugated TTF-π-TCAQ System: Synthesis, Structure, and Electronic Properties
2011
The synthesis of the first fully conjugated tetrathiafulvalene-tetracyano-p-quinodimethane ((TTF)-TCNQ)-type system has been carried out by means of a Julia-Kocienski olefination reaction. In particular, a tetracyanoanthraquinodimethane (TCAQ) formyl derivative and two new sulfonylmethyl-exTTFs (exTTF = 2-[9-(1,3-dithiol-2-ylidene)anthracen-10(9H)-ylidene]-1,3-dithiole)--prepared as new building blocks--were linked. A variety of experimental conditions reveal that the use of sodium hexamethyldisilazane (NaHMDS) as base in THF afforded the E olefins with excellent stereoselectivity. Theoretical calculations at the B3LYP/6-31G** level point to highly distorted exTTF and TCAQ that form an almo…