Search results for "GERMANIUM"
showing 10 items of 249 documents
Spectroscopic studies of neutron-deficient light nuclei: decay properties of 21Mg, 25Si and 26P
2003
Neutron‐deficient nuclei with Tz equals to −3/2 and −2 have been produced at the GANIL/LISE3 facility in fragmentation reactions of a 95 MeV/u 36Ar primary beam in a 12C target. For the first time, β‐delayed proton and β‐γ emission has been simultaneously observed in the decay of 21Mg, 25Si and 26P. The decay scheme of the latter is proposed and the Gamow‐Teller strength distribution in its β decay is compared to shell‐model calculations based on the USD interaction. The B(GT) values derived from the absolute measurement of the β‐branching ratios are in agreement with the quenching factor of about 60% obtained for allowed Gamow‐Teller transitions in this mass region. A precise half‐life of …
Transition-Edge Sensors for Particle Induced X-ray Emission Measurements
2013
In this paper we present a new measurement setup, where a transitionedge sensor detector array is used to detect X-rays in particle induced X-ray emission measurements with a 2 MeV proton beam. Transition-edge sensors offer orders of magnitude improvement in energy resolution compared to conventional silicon or germanium detectors, making it possible to recognize spectral lines in materials analysis that have previously been impossible to resolve, and to get chemical information from the elements. Our sensors are cooled to the operation temperature (65 mK) with a cryogen-free adiabatic demagnetization refrigerator, which houses a specially designed X-ray snout that has a vacuum tight window…
High-efficiency silicon-compatible photodetectors based on Ge quantum dots
2011
We report on high responsivity, broadband metal/insulator/semiconductor photodetectors with amorphous Ge quantum dots (a-Ge QDs) as the active absorbers embedded in a silicon dioxide matrix. Spectral responsivities between 1-4 A/W are achieved in the 500-900 nm wavelength range with internal quantum efficiencies (IQEs) as high as ∼700%. We investigate the role of a-Ge QDs in the photocurrent generation and explain the high IQE as a result of transport mechanisms via photoexcited QDs. These results suggest that a-Ge QDs are promising for high-performance integrated optoelectronic devices that are fully compatible with silicon technology in terms of fabrication and thermal budget. © 2011 Amer…
Irradiation induced Germanium Lone Pair Centers in Ge-doped Sol-gel SiO2: luminescence lifetime and temperature dependence
2010
We studied the temperature dependence of the emission profile and of the lifetime, measured at 4.3 eV, related to the germanium lone pair centers (GLPC) induced by gamma ray at 5 MGy in a Ge-doped silica sample and in an analogous sample irradiated at 10 MGy, in which by a successive thermal treatment up to 415 °C the induced GLPC has been modified (named residual GLPC in the following). The measurements were recorded in the temperature range 10-300 K using an excitation of ∼5.2 eV. The data show that the energy level scheme of the induced and the residual GLPC is very similar to that of the native defects generated during the synthesis, and the intersystem crossing process (ISC) of the ind…
Comparison of gamma-ray coincidence and low-background gamma-ray singles spectrometry
2011
Aerosol samples have been studied under different background conditions using gamma-ray coincidence and low-background gamma-ray singles spectrometric techniques with High-Purity Germanium detectors. Conventional low-background gamma-ray singles counting is a competitive technique when compared to the gamma-gamma coincidence approach in elevated background conditions. However, measurement of gamma-gamma coincidences can clearly make the identification of different nuclides more reliable and efficient than using singles spectrometry alone. The optimum solution would be a low-background counting station capable of both singles and gamma-gamma coincidence spectrometry.
Electric current induced modification of germanium nanowire NEM switch contact.
2015
We present an investigation of contact properties of a germanium (Ge) nanowire based nanoelectromechanical (NEM) switch in its ON state. The contact stiffness in the ON state was evaluated by detecting the nanowire's resonance frequency. It was found that the resonance frequency increases when electric current flows through the nanowire/counter electrode contact area. The reason for modification in the contact area is referred to as electric-current-induced processes in the native oxide layer covering the nanowires. The presented resonance shift method is a simple way to indicate strengthening of the nanowire/counter electrode contact area without disassembling the contact.
An easy route to 1-germaindenes via a transmetallation zirconiumgermanium reaction
1993
Abstract Several 1-zirconaindenes ( 4 ) have been obtained easily by heating phenylmethylzirconocene with various symmetrical (R R′ CH 3 , C 2 H 5 , n-C 3 H 7 , Si(CH 3 ) 3 and unsymmetrical (R CH 3 , R′ Si(CH 3 ) 3 ) alkynes (RCCR′). Under similar experimental conditions, the ynamine, diethylaminotrimethylsilylethyne, led to a regioselective reaction. From the X-ray structure of the zirconaindene product, the trimethylsilyl group was found close to the zirconium atom. Compounds 4 with germanium tetrachloride afford new 1-germaindenes ( 7 ) characterized by 1 H and 13 C NMR and mass spectrometry, in good yield.
Separation and purification of no-carrier-added arsenic from bulk amounts of germanium for use in radiopharmaceutical labelling
2010
AbstractRadioarsenic labelled radiopharmaceuticals could add special features to molecular imaging with positron emission tomography (PET). For example the long physical half-lives of72As (T1/2=26 h) and74As (T1/2=17.8 d) in conjunction with their high positron branching rates of 88% and 29%, respectively, allow the investigation of slow physiological or metabolical processes, like the enrichment and biodistribution of monoclonal antibodies in tumour tissue or the characterization of stem cell trafficking. A method for separation and purification of no-carrier-added (nca) arsenic from irradiated metallic germanium targets based on distillation and anion exchange is developed. It finally con…
G2(MP2) Investigation of Alane-[X(CH3)3]- (X = C, Si, and Ge) and Alane-Y(CH3)3 (Y = N, P, and As) Interactions
2001
Alane-[X(CH3)3]- (X = C, Si, and Ge) and alane-Y(CH3)3 (Y = N, P, and As) have been investigated as donor−acceptor complex types at the G2(MP2) level of theory. The results show that the anionic complexes are more stable than the neutral ones. They show also that this stability decreases when going from carbon to germanium for [H3AlX(CH3)3]- complexes and from nitrogen to arsenic for H3AlY(CH3)3 complexes. The interaction diagrams prove that the evolution of complexation energy depends on the coordination mode. In fact, it is a result of two interaction types: interaction between “a1” symmetry fragment molecular orbital (stabilizing) and interactions between “e” symmetry fragment molecular…
GERMANIUM DICARBIDE: EVIDENCE FOR A T−SHAPED GROUND STATE STRUCTURE
2017
The equilibrium structure of germanium dicarbide GeC2 has been an open question since the late 1950s. Although most high-level quantum calculations predict an L-shaped geometry, a T-shaped or even a linear geometry cannot be ruled out because of the very flat potential energy surface. By recording the rotational spectrum of this dicarbide using sensitive microwave and millimeter techniques, we unambiguously establish that GeC2 adopts a vibrationally averaged T-shaped structure in its ground state. From analysis of 14 isotopologues, a precise r0 structure has been derived, yielding a Ge–C bond length of 1.952(1) A and an apex angle of 38.7(2)°.