Search results for "GH"

The interdependence of structural and electrical properties in TiO2/TiO/Ti periodic multilayers

2013

International audience; Multilayered structures with 14-50 nm periods composed of titanium and two different titanium oxides, TiO and TiO2, were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. The structure and composition of these periodic TiO2/TiO/Ti stacks were investigated by X-ray diffraction and transmission electronic microscopy techniques. Two crystalline phases, hexagonal close packed Ti and face centred cubic TiO, were identified in the metallic-rich sub-layers, whereas the oxygen-rich ones comprised a mixture of amorphous TiO2 and rutile phase. DC electrical resistivity rho measured for temperatures ranging from 300 to 500 K exhibited a meta…

Partial discharge of gel insulated high voltage power modules subjected to unconventional voltage waveforms

2016

Performances and duration of the new generation of high voltage power electronic components are dependent on dielectric materials aim to insulating their internal terminals. The presence of defects, some due to faults generated during the manufacturing process, but also due to the internal design of layers and connections, can cause local enhancements of electric field and consequently possible activity of partial discharges phenomena or other effects (aging, tracking) that may result in reduction of device reliability. Furthermore, the usage of unconventional voltage waveforms, like square waves or pulse width modulated waves, additionally increases the electrical aging of the insulation s…

Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…

Deformation of bubbles in silicon gel insulation under an alternating electric field

2019

The behavior of silicone gel under electrical stress plays a significant role in the reliability and durability of high voltage electronic power devices due to its widespread use for the insulation of IGBT modules and other components. The charges accumulation at the bubble boundaries leads to significant displacements due to the establishment of Coulombic forces and the high deformability of colloidal system. The main purpose of this work is to validate a numerical approach useful to investigate, for a given silicone gel, the non-linear relation between the applied HVDC stress and the electric field over an air bubble within the insulation bulk. The analysis has been carried out by means o…

Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films

2012

Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…

The effect of cavity tuning on oxygen beam currents of an A-ECR type 14 GHz electron cyclotron resonance ion source.

2016

The efficiency of the microwave-plasma coupling plays a significant role in the production of highly charged ion beams with electron cyclotron resonance ion sources (ECRISs). The coupling properties are affected by the mechanical design of the ion source plasma chamber and microwave launching system, as well as damping of the microwave electric field by the plasma. Several experiments attempting to optimize the microwave-plasma coupling characteristics by fine-tuning the frequency of the injected microwaves have been conducted with varying degrees of success. The inherent difficulty in interpretation of the frequency tuning results is that the effects of microwave coupling system and the ca…

Photoelectron Emission from Metal Surfaces Induced by Radiation Emitted by a 14 GHz Electron Cyclotron Resonance Ion Source

2015

Photoelectron emission measurements have been performed using a room-temperature 14 GHz ECR ion source. It is shown that the photoelectron emission from Al, Cu, and stainless steel (SAE 304) surfaces, which are common plasma chamber materials, is predominantly caused by radiation emitted from plasma with energies between 8 eV and 1 keV. Characteristic X-ray emission and bremsstrahlung from plasma have a negligible contribution to the photoelectron emission. It is estimated from the measured data that the maximum conceivable photoelectron flux from plasma chamber walls is on the order of 10% of the estimated total electron losses from the plasma. peerReviewed

Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry

2000

A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…

2020

Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of nonequilibrium electronic processes, transient states in chemical reactions, or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical, and structural analyses requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that c…

Study of the Secondary Electron Yield in Dielectrics Using Equivalent Circuital Models

2018

[EN] Secondary electron emission has an important role on the triggering of the multipactor effect; therefore, its study and characterization are essential in radio-frequency waveguide applications. In this paper, we propose a theoretical model, based on equivalent circuit models, to properly understand charging and discharging processes that occur in dielectric samples under electron irradiation for secondary electron emission characterization. Experimental results obtained for Pt, Si, GaS, and Teflon samples are presented to verify the accuracy of the proposed model. Good agreement between theory and experiments has been found.