Search results for "Gallium"
showing 10 items of 265 documents
Limiting neutrino magnetic moments with Borexino Phase-II solar neutrino data
2017
A search for the solar neutrino effective magnetic moment has been performed using data from 1291.5 days exposure during the second phase of the Borexino experiment. No significant deviations from the expected shape of the electron recoil spectrum from solar neutrinos have been found, and a new upper limit on the effective neutrino magnetic moment of $\mu_{\nu}^{eff}$ $<$ 2.8$\cdot$10$^{-11}$ $\mu_{B}$ at 90\% c.l. has been set using constraints on the sum of the solar neutrino fluxes implied by the radiochemical gallium experiments.Using the limit for the effective neutrino moment, new limits for the magnetic moments of the neutrino flavor states, and for the elements of the neutrino magne…
Internal geometry and coolant choices for solid high power neutron spallation targets
2014
Abstract The next generation of neutron spallation sources envisages high power proton beam interaction with a heavy metal target. Solid targets have potentially higher spallation efficiency due to the possibility to use metals with higher density than used in liquid metal targets, but to realize this potential the solid fraction must be high enough. As the power released in the form of heat can reach several MW in the target volume of typically 10 l, target cooling can be a serious challenge. Heat evacuation efficiency for different solid fraction geometries at high power is analyzed for different coolant options (helium, water and gallium) using empirical correlations for friction factors…
Frequency influence on the hot-electron noise reduction in GaAs operating under periodic signals
2008
A Monte Carlo study of the role of the frequency on the hot-electron intrinsic noise reduction in an n-type GaAs bulk driven by two mixed cyclostationary electric fields is presented. Previous numerical results showed the possibility to reduce the diffusion noise under specific wave-mixing conditions. In this work the variations of the noise properties are investigated by computing and integrating the spectral density of the velocity fluctuations. We found that the effect of reduction of the noise level due to the addition of a second field at twice frequency is almost independent of the frequency.
Nuclear mean-square charge radii of63,64,66,68−82Ga nuclei: No anomalous behavior atN=32
2012
Collinear laser spectroscopy was performed on the ${}^{63,64,66,68\ensuremath{-}82}$Ga isotopes with neutron numbers from $N=32$ to $N=51$. These measurements were carried out at the ISOLDE radioactive ion beam facility at CERN. Here we present the nuclear mean-square charge radii extracted from the isotope shifts and, for the lighter isotopes, new spin and moment values. New ground-state nuclear spin and moments were extracted from the hyperfine spectra of ${}^{63,70}$Ga, measured on an atomic transition in the neutral atom. The ground-state spin of ${}^{63}$Ga is determined to be $I=3/2$. Analysis of the trend in the change in mean-square charge radii of the gallium isotopes demonstrates …
Hot electron noise in n-type GaAs in crossed electric and magnetic fields
2006
A Monte Carlo analysis of hot electron transport properties of bulk \textit{n}-type GaAs in crossed electric and magnetic fields is presented. %Magnetic field strengths allowing negligible quantum effects in the electron dynamics during free flights are considered. Effects due to the nonparabolicity of bands are properly taken into account by means of a local parabolic approximation. Stochastic properties of electron transport are analyzed by computing the velocity auto-correlation function and the spectral density of fluctuations. It is shown how the presence of the magnetic field is able to deeply modify electron noise up to high electric field strengths. The resulting features of the vel…
Monte Carlo Analysis of Voltage-Current Characteristic Nonlinearity and Harmonic Generation in Submicron Semiconductor Structures
2006
Using a multiparticles Monte Carlo technique, we investigate the dependence of the nonlinear carrier dynamics in GaAs n+nn+ structures operating under very intense sub-terahertz signals from some process parameters as: i) the frequency and the intensity of the excitation signal and ii) the length of the n region
Realization of a robust single-parameter quantized charge pump
2008
This paper describes a novel scheme for quantized charge pumping based on single-parameter modulation. The device is realized in an AlGaAs-GaAs gated nanowire. A particular advantage of this realization is that operation in the quantized regime can be achieved in a potentially large range of amplitude and dc off-set of the driving signal. This feature together with the simple configuration might enable large scale parallel operation of many such devices.
Dynamic $\mathrm{R}_{\mathrm{ON}}$ evaluation of commercial GaN HEMT under different switching and radiation conditions
2019
This paper focus on the study of dynamic resistance $(\mathrm{R}_{\mathrm{dyn}})$ over commercial Gallium Nitride High Electromobility Transistors (GaN HEMTs) devices. The first part shows a study of the main mechanism causing $\mathrm{R}_{\mathrm{dyn}}$ , showing that depending on the structure, stress time, voltage applied and switching conditions, the $\mathrm{R}_{\mathrm{dyn}}$ can suffer a relevant increase. Also, it is demonstrated how the use of soft-switching conditions can alleviate trapping effects. Finally, due to the interest over these devices for future space applications, the effects of gamma radiation over the $\mathrm{R}_{\mathrm{dyn}}$ has been studied.
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…
Dependence of the lattice parameters and the energy gap of zinc-blende-type semiconductors on isotopic masses.
1996
The dependence of the ${\mathit{E}}_{0}$ direct gap of Ge, GaAs, and ZnSe on isotopic masses at low temperatures has been investigated. Contributions of the variation of the lattice parameter to the gap shift of the binary compounds have been evaluated by using a volume-dependent lattice dynamics, while local empirical pseudopotential techniques have been employed to calculate gap shifts due to electron-phonon interaction. The dependence of these terms on the lattice-dynamical model and on the q\ensuremath{\rightarrow}0 extrapolation of the pseudopotential form factors has been investigated. The contributions of the optical and acoustical modes to the isotopic shift are analyzed. The result…