Search results for "Gap"
showing 10 items of 1144 documents
Effects of Conduction Band Structure and Dimensionality of the Electron Gas on Transport Properties of InSe under Pressure
1996
We report Hall effect and resistivity measurements in InSe under pressure. The electron concentration strongly decreases under pressure in samples exhibiting 3D transport behaviour. This is explained by the existence of an excited minimum in the conduction band moving to lower energies under pressure. The related impurity level traps electrons as it reaches the band gap and approaches the Fermi level. In samples exhibiting 2D behaviour the electron concentration remains constant. This behaviour, together with the pressure dependence of the Hall mobility, is consistent with a previous model which considers high mobility 3D electrons and low mobility 2D electrons to contribute to charge trans…
Effects of Nid-levels on the electronic band structure of NixCd1-xO semiconducting alloys
2017
NixCd1-xO has a ∼3 eV band edge offset and bandgap varying from 2.2 to 3.6 eV, which is potentially important for transparent electronic and photovoltaic applications. We present a systematic study of the electronic band structure of NixCd1-xO alloys across the composition range. Ion irradiation of alloy samples leads to a saturation of the electron concentration associated with pinning of the Fermi level (EF) at the Fermi stabilization energy, the common energy reference located at 4.9 eV below the vacuum level. The composition dependence of the pinned EF allows determination of the conduction band minimum (CBM) energy relative to the vacuum level. The unusually strong deviation of the CBM…
Ab initio calculations of PbTiO 3 /SrTiO 3 (001) heterostructures
2016
We performed ab initio calculations for the PbTiO3/SrTiO3 (001) heterostructures. For both PbO and TiO2-terminations of the PbTiO3 (001) thin film, augmented on the SrTiO3 (001) substrate, the magnitudes of atomic relaxations Δz increases as a function of the number of augmented monolayers. For both terminations of the augmented PbTiO3 (001) nanothin film, all upper, third and fifth monolayers are displaced inwards (Δz is negative), whereas all second, fourth and sixth monolayers are displaced outwards (Δz is positive). The B3PW calculated PbTiO3/SrTiO3 (001) heterostructure band gaps, independently from the number of augmented layers, are always smaller than the PbTiO3 and SrTiO3 bulk band…
Ab initio electronic band structure calculation of InP in the wurtzite phase
2011
Abstract We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a = 0.4150 nm , c = 0.6912 nm , and an internal parameter u = 0.371 , showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actu…
Effect of Pressure on Direct Optical Transitions of ?-InSe
2000
We have investigated the effect of hydrostatic pressure on direct optical transitions of the layered semiconductor γ-InSe by photoreflectance (PR) spectroscopy (T = 300 K). In addition, electroreflectance (ER) measurements were performed at ambient pressure. Six structures are resolved in the ER spectra in the energy range from 1.1 to 3.6 eV. The pressure dependence of four of these structures was determined by PR spectroscopy for pressures up to 8 GPa. In order to assign the features observed above the fundamental gap we have carried out band structure calculations for InSe at ambient pressure using a full-potential linear augmented plane wave method. Based on calculated band gap deformati…
Lattice and electronic contributions to the refractive index of CuWO4
2014
We report an investigation of the refractive index dispersion and anisotropy in CuWO4 by means of interference measurements in two extinction directions from mid infrared to the visible region of the energy spectrum. The analysis of the refractive index dispersion yields ϵ(∞) = 4.5(1) for light polarization parallel to the c-axis and ϵ(∞) = 5.3(1) with respect to the other extinction axis. In addition, we report reflectance measurements carried out from the far infrared to the near ultraviolet to study the lattice and electronic contributions to the refractive index of CuWO4. We have determined the wavenumbers of nine infrared active lattice modes and compared them with previous ab initio c…
Electron–phonon effects on the direct band gap in semiconductors: LCAO calculations
2002
Abstract Using a perturbative treatment of the electron–phonon interaction, we have studied the effect of phonons on the direct band gap of conventional semiconductors. Our calculations are performed in the framework of the tight-binding linear combination of atomic orbitals (LCAO) approach. Within this scheme we have calculated the temperature and isotopic mass dependence of the lowest direct band gap of several semiconductors with diamond and zincblende structure. Our results reproduce the overall trend of available experimental data for the band gap as a function of temperature, as well as give correctly the mass dependence of the band gap on isotopic. A calculation of conduction band in…
Band Alignments in InxGa1–xP/GaAs Heterostructures Investigated by Pressure Experiments
2000
6 páginas, 3 figuras.
Behaviour of Nb2O5/PPy contacts: From Schottky barriers to p-n junctions
2009
In this work, a study of the photoelectrochemical responses of Nb O /PPy contacts fabricated in both organic 2 5 and aqueous solutions is performed. From the comparison between the experimental data of PPy photodeposited on Nb O in organic and in aqueous solutions, it is evident that the medium used for the photodeposition 2 5 influences the absorption coefficient, the band gap and flat band potential values.
Intrinsic electrical conductivity of nanostructured metal-organic polymer chains
2012
One-dimensional conductive polymers are attractive materials because of their potential in flexible and transparent electronics. Despite years of research, on the macro- and nano-scale, structural disorder represents the major hurdle in achieving high conductivities. Here we report measurements of highly ordered metal-organic nanoribbons, whose intrinsic (defect-free) conductivity is found to be 104 S m−1, three orders of magnitude higher than that of our macroscopic crystals. This magnitude is preserved for distances as large as 300 nm. Above this length, the presence of structural defects (~ 0.5%) gives rise to an inter-fibre-mediated charge transport similar to that of macroscopic crysta…