Search results for "HETEROJUNCTION"

Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

2020

Abstract We have analysed electrical properties of extended defects and interfaces in fully strained and partially relaxed InxGa1-xN/GaN heterostructures by means of Kelvin probe force microscopy and surface photovoltage spectroscopy. The study highlights the role of indium incorporation and Si doping levels on the charge state of extended defects including threading dislocations, V defects and misfit dislocations. Surface potential maps reveal that these defects are associated with a different local work function and thus could remarkably alter electron-hole recombination mechanisms of InxGa1-xN/GaN layers locally. Surface photovoltage spectra clearly demonstrate the role of misfit disloca…

Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction

2011

We characterize SnO(2):F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for vertical bar V vertical bar< 0:1 V and have a super-linear behavior (power law) for vertical bar V vertical bar < 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the …

ELECTRODEPOSITION OF NOVEL POLY(NAPHTHALENEDIIMIDE-QUATERTHIOPHENE) THIN FILMS AND APPLICATIONS IN PLASTIC OPTOELECTRONICS DEVICES

2013

A novel symmetric naphthalenediimide-quaterthiophene derivative (NDIT4d) has been polymerized on different substrates including glassy carbon and ITO/PET electrodes by means of electrochemical methods. XPS and UV-VIS spectroscopy as well as cyclic voltammetry have been employed for characterizing the thin film chemical features, the band gap and the HOMO and LUMO levels. DFT computational studies were in close agreement with the experimental observables also showing intriguing geometrical effects on the band gap energy values. The comparison of the energy levels locations of the electrodeposited poly(naphthalenediimide-quaterthiophene) derivative (e-PNDIT4) and P3HT thin films transferred b…

Photon assisted-inversion of majority charge carriers in molecular semiconductor-based organic heterojunctions

2021

International audience; Ambipolar molecular materials hold great promises as a building block of next generation highly efficient, less complex and low cost electronics devices. In this endeavor, the present work reports the fabrication of organic heterojunction devices based on halogenated copper Phthalocyanines (CuPc) and lutetium bisphthalocyanine (LuPc2) bilayer, investigates their structural and electrical properties and probes the ambipolar behavior by ammonia sensing. Microstructural analysis of the heterostructure thin films revealed compact and semicrystalline organization, depending on the number of halogen substituents in CuPc. The heterojunction devices reveal a non-linear I(V) …

NEUTRON IRRADIATION EFFECTS IN PZ and PZT THIN FILMS

2005

ABSTRACT Neutron irradiation effects on highly oriented antiferroelectric PbZrO3 (PZ) and ferroelectric PbZr0.53Ti0.47O3 (PZT) thin films are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for fusion devices like ITER. All investigated thin films were prepared by a sol-gel technique and by pulsed laser deposition (PLD) respectively. The dielectric properties were investigated in a frequency range from 1 to 250 kHz and at temperatures up to 400°C, prior to and after irradiation to a neutron fluence of 3 * 1022 m−2 (E > 0.1 MeV). After irradiation, the films were anneald in several steps up to 400°C in order to remove the radiat…

2021

Gold-assisted mechanical exfoliation currently represents a promising method to separate ultralarge (centimeter scale) transition metal dichalcogenide (TMD) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between Au and chalcogen atoms is key to achieving this nearly perfect 1L exfoliation yield. On the other hand, it may significantly affect the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area 1L MoS2 exfoliated on ultraflat Au films (0.16-0.21 nm roughness) and finally transferred to an i…

Ag sensitized TiO2 and NiFe2O4 three-component nanoheterostructures: synthesis, electronic structure and strongly enhanced visible light photocatalyt…

2016

This study reports on the synthesis and characterisation of two- and three-component visible light active photocatalytic nanoparticle heterostructures, based on TiO2 and NiFe2O4 and sensitized with Ag. We observe that a Ag content as small as 1 at% in the TiO2/NiFe2O4 heterostructure increases by more than an order of magnitude the rate constant for the visible light photocatalytic process. We rationalise this in terms of the measured structure and electronic structure data of the binary and ternary combinations of the component materials and focus on details, which show that an optimised deposition sequence is vital for attaining high values of photocatalytic efficiency, because the charge…

Superior Electrocatalytic Activity of MoS2-Graphene as Superlattice

2020

[EN] Evidence by selected area diffraction patterns shows the successful preparation of large area (cm x cm) MoS2/graphene heterojunctions in coincidence of the MoS2 and graphene hexagons (superlattice). The electrodes of MoS2/graphene in superlattice configuration show improved catalytic activity for H-2 and O-2 evolution with smaller overpotential of +0.34 V for the overall water splitting when compared with analogous MoS2/graphene heterojunction with random stacking.

Multilayer (Al,Ga)N Structures for Solar-Blind Detection

2004

We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (Al,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a low-temperature GaN buffer layer. They consist of a 0.3-0.4-/spl mu/m active layer grown on a thick (Al,Ga)N window layer (/spl ap/1 /spl mu/m) that is transparent at the wavelength of interest. Different Al contents were used in the window layer. We observed that, in general, samples with a high Al content were cracked, which is explained in terms of mechanical strain. MSM photodetectors fabricated on these samples showed large leakage curr…

Band unpinning and photovoltaic model for P3HT:PCBM organic bulk heterojunctions under illumination

2008

Capacitance analysis of P3HT:PCBM bulk heterojunction solar cells, in dark and under illumination, shows a linear Mott-Schottky characteristic at moderate reverse bias, indicating p-doping of the organic blend. The flatband potential under illumination is displaced negatively about 0.6 V with respect to dark conditions. A basic photovoltaic model is developed to explain this, in terms of electron transfer via surface states at the metal/organic interface. Surface states with a slow exchange kinetics, become charged under illumination, unpinning the band and decreasing the depletion layer at the electron extraction contact. This becomes a major factor limiting the performance of bulk heteroj…