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RESEARCH PRODUCT

Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

Michael HeukenAlbert MinjAna CrosDaniela CavalcoliMaria Antonietta Fazio

subject

Materials scienceSurface photovoltageGeneral Physics and Astronomychemistry.chemical_element02 engineering and technology010402 general chemistryKelvin probe force microscopy01 natural sciencesSurface photovoltage spectroscopyWork functionSpectroscopyKelvin probe force microscopeCondensed matter physicsInxGa1-xN/GaN heterostructureRelaxation (NMR)DopingHeterojunctionSurfaces and InterfacesGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesSurfaces Coatings and Filmschemistry0210 nano-technologyIndium

description

Abstract We have analysed electrical properties of extended defects and interfaces in fully strained and partially relaxed InxGa1-xN/GaN heterostructures by means of Kelvin probe force microscopy and surface photovoltage spectroscopy. The study highlights the role of indium incorporation and Si doping levels on the charge state of extended defects including threading dislocations, V defects and misfit dislocations. Surface potential maps reveal that these defects are associated with a different local work function and thus could remarkably alter electron-hole recombination mechanisms of InxGa1-xN/GaN layers locally. Surface photovoltage spectra clearly demonstrate the role of misfit dislocations and high Si-doping level on interface recombination process. The interplay between Si doping level and In% on the electronic properties of the extended defects has been also clarified.

yearjournalcountryeditionlanguage
2020-06-01
10.1016/j.apsusc.2020.146016http://hdl.handle.net/11585/782792