Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

Abstract We have analysed electrical properties of extended defects and interfaces in fully strained and partially relaxed InxGa1-xN/GaN heterostructures by means of Kelvin probe force microscopy and surface photovoltage spectroscopy. The study highlights the role of indium incorporation and Si doping levels on the charge state of extended defects including threading dislocations, V defects and misfit dislocations. Surface potential maps reveal that these defects are associated with a different local work function and thus could remarkably alter electron-hole recombination mechanisms of InxGa1-xN/GaN layers locally. Surface photovoltage spectra clearly demonstrate the role of misfit disloca…

Analysis of Σ=3 and Σ=9 Twin Boundaries in Three-Crystal Silicon Ingots

Surface properties of AlInGaN/GaN heterostructure

Abstract Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10–11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied.