6533b855fe1ef96bd12b12c6

RESEARCH PRODUCT

Surface properties of AlInGaN/GaN heterostructure

Michael KneisslMichael HeukenDaniela CavalcoliPatrick VogtAlbert MinjC. GiesenAna CrosD. Skuridina

subject

Materials sciencechemistry.chemical_elementCondensed Matter Physic02 engineering and technologyKelvin probe force microscopy01 natural sciencesOxygenlaw.inventionBarrier layerlaw0103 physical sciencesMicroscopyMechanics of MaterialGeneral Materials ScienceScanning tunneling microscopySpectroscopy010302 applied physicsV-defectbusiness.industryMechanical EngineeringHeterojunctionAlInGaN/GaNCiència dels materials021001 nanoscience & nanotechnologyCondensed Matter PhysicsMicroscòpiachemistryMechanics of MaterialsChemisorptionOptoelectronicsMaterials Science (all)Scanning tunneling microscope0210 nano-technologybusinessVolta potential

description

Abstract Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10–11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied.

yearjournalcountryeditionlanguage
2016-11-01Materials Science in Semiconductor Processing
https://doi.org/10.1016/j.mssp.2016.04.005