Search results for "HIGH"
showing 10 items of 25798 documents
Operating a cesium sputter source in a pulsed mode
2020
A scheme is presented for pulsing of a cesium sputter negative ion source by periodically switching on and off the high voltage driving the sputtering process. We demonstrate how the pulsed ion beam can be used in combination with a pulsed laser (6 ns pulse length) that has a 10 Hz repetition rate to study the photodetachment process, where a negative ion is neutralized due to the absorption of a photon. In such experiments, where the ion beam is used only for a small fraction of the time, we show that the pulsed mode operation can increase the lifetime of a cathode by two orders of magnitude as compared with DC operation. We also investigate how the peak ion current compares with the ion c…
A new 18 GHz room temperature electron cyclotron resonance ion source for highly charged ion beams
2020
An innovative 18 GHz HIISI (Heavy Ion Ion Source Injector) room temperature Electron Cyclotron Resonance (ECR) ion source (ECRIS) has been designed and constructed at the Department of Physics, University of Jyväskylä (JYFL), for the nuclear physics program of the JYFL Accelerator Laboratory. The primary objective of HIISI is to increase the intensities of medium charge states (M/Q ≅ 5) by a factor of 10 in comparison with the JYFL 14 GHz ECRIS and to increase the maximum usable xenon charge state from 35+ to 44+ to serve the space electronics irradiation testing program. HIISI is equipped with a refrigerated permanent magnet hexapole and a noncylindrical plasma chamber to achieve very stro…
Dielectric breakdown of fast switching LCD shutters
2017
Fast liquid crystal optical shutters due to fast switching, vibrationless control and optical properties have found various applications: substitutes for mechanical shutters, 3D active shutter glasses, 3D volumetric displays and more. Switching speed depends not only on properties of liquid crystal, but also on applied electric field intensity. Applied field in the shutters can exceed >10 V/micron which may lead to dielectric breakdown. Therefore, a dielectric thin film is needed between transparent conductive electrodes in order to reduce breakdown probability. In this work we have compared electrical and optical properties of liquid crystal displays with dielectric thin films with thickne…
Low-temperature luminescence of ScF3 single crystals under excitation by VUV synchrotron radiation
2020
The work was supported by the Latvian Science Council grant LZP-2018/2-0358. The research leading to this result has also been supported by the project CALIPSO plus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. The author is grateful to K. Chernenko (MAX IV Laboratory, Lund University) for his assistance during beamtime experiments and to A. I. Popov for the fruitful discussions. V.P. also acknowledges Valsts pētījumu programma “Augstas enerģijas fizika un paātrinātāju tehnoloģijas” (Projekta Nr. VPP-IZM-CERN-2020/1-0002). REFERENCES
Low-temperature luminescence of catangasite single crystals under excitation by vacuum ultraviolet synchrotron radiation
2020
The luminescent properties of Ca3TaGa3Si2O14 (CTGS, catangasite) single crystals have been studied by means of the vacuum ultraviolet excitation spectroscopy utilizing synchrotron radiation from 1.5 GeV storage ring of MAX IV synchrotron facility. Two emission bands at 320 nm (3.87 eV) and 445 nm (2.78 eV) have been detected. Examining excitation spectra in vacuum ultraviolet spectral range, the 320 nm emission band was explained as the emission band of self-trapped exciton in CTGS single crystal. Its atomic structure is discussed. It is also proposed that the 445 nm (2.78 eV) emission in the CTGS is due to the F centers, which have shown a well-resolved excitation (absorption) band at 5.1 …
The interdependence of structural and electrical properties in TiO2/TiO/Ti periodic multilayers
2013
International audience; Multilayered structures with 14-50 nm periods composed of titanium and two different titanium oxides, TiO and TiO2, were accurately produced by DC magnetron sputtering using the reactive gas pulsing process. The structure and composition of these periodic TiO2/TiO/Ti stacks were investigated by X-ray diffraction and transmission electronic microscopy techniques. Two crystalline phases, hexagonal close packed Ti and face centred cubic TiO, were identified in the metallic-rich sub-layers, whereas the oxygen-rich ones comprised a mixture of amorphous TiO2 and rutile phase. DC electrical resistivity rho measured for temperatures ranging from 300 to 500 K exhibited a meta…
Partial discharge of gel insulated high voltage power modules subjected to unconventional voltage waveforms
2016
Performances and duration of the new generation of high voltage power electronic components are dependent on dielectric materials aim to insulating their internal terminals. The presence of defects, some due to faults generated during the manufacturing process, but also due to the internal design of layers and connections, can cause local enhancements of electric field and consequently possible activity of partial discharges phenomena or other effects (aging, tracking) that may result in reduction of device reliability. Furthermore, the usage of unconventional voltage waveforms, like square waves or pulse width modulated waves, additionally increases the electrical aging of the insulation s…
Deformation of bubbles in silicon gel insulation under an alternating electric field
2019
The behavior of silicone gel under electrical stress plays a significant role in the reliability and durability of high voltage electronic power devices due to its widespread use for the insulation of IGBT modules and other components. The charges accumulation at the bubble boundaries leads to significant displacements due to the establishment of Coulombic forces and the high deformability of colloidal system. The main purpose of this work is to validate a numerical approach useful to investigate, for a given silicone gel, the non-linear relation between the applied HVDC stress and the electric field over an air bubble within the insulation bulk. The analysis has been carried out by means o…
Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films
2012
Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors, namely, tBuN═Nb(NEt2)3, tBuN═Nb(NMeEt)3, and tamylN═Nb(OtBu)3. These precursors are liquid at room temperature, present good volatility, and are reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 150 to 375 °C. ALD-type saturative growth modes were confirmed at 275 °C for tBuN═Nb(NEt2)3 and tBuN═Nb(NMeEt)3 together with both oxygen sources. Constant growth rate was observed between a temperature regions of 150 and 325 °C. By contrast, amylN═Nb(OtBu)3 exhibited limited thermal stability and thus a saturative growth mode was not achieved. All films we…
The effect of cavity tuning on oxygen beam currents of an A-ECR type 14 GHz electron cyclotron resonance ion source.
2016
The efficiency of the microwave-plasma coupling plays a significant role in the production of highly charged ion beams with electron cyclotron resonance ion sources (ECRISs). The coupling properties are affected by the mechanical design of the ion source plasma chamber and microwave launching system, as well as damping of the microwave electric field by the plasma. Several experiments attempting to optimize the microwave-plasma coupling characteristics by fine-tuning the frequency of the injected microwaves have been conducted with varying degrees of success. The inherent difficulty in interpretation of the frequency tuning results is that the effects of microwave coupling system and the ca…