Search results for "Hall Effect"
showing 10 items of 702 documents
A Composite Phononic Crystal Design for Quasiparticle Lifetime Enhancement in Kinetic Inductance Detectors
2019
A nanoscale phononic crystal filter (reflector) is designed for a kinetic inductance detector where the reflection band is matched to the quasiparticle recombination phonons with the aim to increase quasiparticle lifetime in the superconducting resonator. The inductor is enclosed by a 1 um wide phononic crystal membrane section with two simple hole patterns that each contain a partial spectral gap for various high frequency phonon modes. The phononic crystal is narrow enough for low frequency thermal phonons to propagate unimpeded. With 3D phonon scattering simulations over a 40 dB attenuation in transmitted power is found for the crystal, which was previously estimated to give a lifetime e…
Enhancement of spin Hall conductivity in W-Ta alloy
2020
Generating pure spin currents via the spin Hall effect in heavy metals has been an active topic of research in the last decade. In order to reduce the energy required to efficiently switch neighbouring ferromagnetic layers for applications, one should not only increase the charge- to-spin conversion efficiency but also decrease the longitudinal resistivity of the heavy metal. In this work, we investigate the spin Hall conductivity in W_{1-x}Ta_{x} / CoFeB / MgO (x = 0 - 0.2) using spin torque ferromagnetic resonance measurements. Alloying W with Ta leads to a factor of two change in both the damping-like effective spin Hall angle (from - 0.15 to - 0.3) and longitudinal resistivity (60 - 120…
Dopant-controlled single-electron pumping through a metallic island
2016
We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.
A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission
2010
This work reports on hard x-ray photoelectron spectroscopy (HAXPES) of CoFeB based tunnel junctions. Aim is to explain the role of the boron diffusion for the observed improvement of the tunneling magnetoresistance ratio with increasing annealing temperature. The high bulk sensitivity of HAXPES was used as a nondestructive technique to analyze CoFeB–MgO–CoFeB magnetic tunnel junctions. The investigated samples were processed at different annealing temperatures from 523 to 923 K. Hard x-ray core level spectroscopy reveals an enforced diffusion of boron from the CoFeB into the adjacent Ta layer with increasing annealing temperature. The dependence of the tunneling magnetoresistance on the ann…
Large modulation of perpendicular magnetic anisotropy in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic heterostructure via spontaneous polarizations
2018
Magnetism control has a variety of applications in magnetic storage and spintronic devices. Instead of the control of direct magnetoelectric coupling via strain, voltage, and Dzyaloshinskii-Moriya interaction, the polarization-dependent coupling in multiferroic materials such as BiFeO3 is employed for the electric-field control of magnetizations in this work. A perpendicular magnetic anisotropy (PMA) has been realized in a BiFeO3/Al2O3/Pt/Co/Pt multiferroic structure at room temperature. Interestingly, a distinct change of coercivity field (∼400%) has been observed in the structure with opposite polarization directions, which can be attributed to the different oxidation degree at the Pt/Co …
The Engineering of Hot Carbon Nanotubes with a Focused Electron Beam
2004
Single-wall and multiwall carbon nanotubes at high temperature are irradiated with the focused electron beam in an electron microscope. Nanotubes can be tailored with monolayer precision, and new morphologies of nanotubes are created. Atoms from layers of multiwall tubes can be removed and the tubes can be bent by a predefined angle. Bundles of single-wall tubes are transformed locally to multiwall tubes with coherent transition between the two modifications.
Second-harmonic Generation Microscopy of Carbon Nanotubes
2012
We image an individual single-walled carbon nanotube (SWNT) by second-harmonic generation (SHG) and transmission electron microscopy and propose that SHG microscopy could be used to probe the handedness of chiral SWNTs.
Photodynamics at the CdSe Quantum Dot–Perylene Diimide Interface: Unraveling the Excitation Energy and Electron Transfer Pathways
2021
Excitation energy and charge transfer processes in perylene diimide dye–CdSe quantum dot complexes have been studied by femtosecond transient absorption spectroscopy. After excitation of the quantu...
Design, near-field characterization, and modeling of 45 circle surface-plasmon Bragg mirrors
2006
The development of surface plasmon polariton (SPP) optical elements is mandatory in order to achieve surface plasmon based photonics. A current approach to reach this goal is to take advantage of the interaction of SPP with defects and design elements obtained by the micro- or nano-structuration of the metal film. In this work, we have performed a detailed study of the performance and behavior of SPP-Bragg mirrors, designed for 45\ifmmode^\circ\else\textdegree\fi{} incidence, based on this approach. Mirrors consisting of gratings of both metal ridges on the metal surface and grooves engraved in the metal, fabricated by means of electron beam lithography and focused ion beam, have been consi…
Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties
2013
Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Gamma-point of the Brillouin zone (E0 gap) has been recently measured, E0 = 0.46 eV at low temperature. The electronic gap at the A point of the Brillouin zone (equivalent to the L point in the zinc-blende structure, E1) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band st…