6533b85bfe1ef96bd12bb4b5
RESEARCH PRODUCT
Dopant-controlled single-electron pumping through a metallic island
Xavier JehlG. BarinovsMarc SanquerSylvain BarraudVyacheslavs KashcheyevsTobias WenzJevgeny KlochanFrank Hohlssubject
Materials sciencePhysics and Astronomy (miscellaneous)FOS: Physical sciencesSilicon on insulator02 engineering and technologyElectron01 natural sciences[PHYS] Physics [physics]MetalElectron transferMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciences[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]010306 general physicsComputingMilieux_MISCELLANEOUS[PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]Quantum tunnelling[PHYS]Physics [physics]Condensed Matter - Mesoscale and Nanoscale PhysicsDopantbusiness.industryResonance021001 nanoscience & nanotechnology[PHYS.COND.CM-MSQHE] Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]visual_artvisual_art.visual_art_mediumOptoelectronicsRadio frequency0210 nano-technologybusiness[PHYS.COND] Physics [physics]/Condensed Matter [cond-mat]description
We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2016-05-23 | Applied Physics Letters |