Search results for "Hall Effect"
showing 10 items of 702 documents
Accessing the fundamentals of magnetotransport in metals with terahertz probes
2015
Spin-dependent conduction in metals underlies all modern magnetic memory technologies, such as giant magnetoresistance (GMR). The charge current in ferromagnetic transition metals is carried by two non-mixing populations of sp-band Fermi-level electrons: one of majority-spin and one of minority-spin. These electrons experience spin-dependent momentum scattering with localized electrons, which originate from the spin-split d-band. The direct observation of magnetotransport under such fundamental conditions, however, requires magnetotransport measurements on the same timescale as the electron momentum scattering, which takes place in the sub-100 fs regime. Using terahertz electromagnetic prob…
Coherent Spin Dependent Landau-Zener Tunneling in Mixed Valence Dimers
2011
In this contribution we introduce the concept of single molecule ferroelectric based on the vibronic pseudo Jahn-Teller model of mixed valence dimeric clusters belonging to the Robin and Day class II compounds. We elucidate the main factors controlling the nonadiabatic Landau-Zener tunneling between the low lying vibronic levels induced by a pulse of the electric field. The transition probabilities are shown to be dependent on the both time of the pulse and the total spin of the cluster. A possibility to control the spin-dependent Landau-Zener tunneling by applying a static magnetic field is discussed.
Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at theLaAlO3/SrTiO3Interface
2015
The LaAlO3=SrTiO3 interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20 K range—indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propo…
Spin-density waves in superdeformed quantum dots
1998
Abstract Electronic shell structure and spin effects in deformed quantum dots are investigated using spin-density functional theory. We recently suggested (Koskinen et al., Phys. Rev. Lett. 79 (1997) 1389) that for circular dots, depending on the density of the two-dimensional electron gas and the electron number, a spin-density wave-like state can occur as a possible ground state. Here these studies are extended to deformed and superdeformed dots, which approach the limit of a finite quantum wire.
Tuning the exciton luminescence in an acoustically depleted two-dimensional electron gas
2007
Standing-wave piezoelectric fields can be used to vary spatially and temporally charge conditions in $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}$ quantum wells (QWs), offering a versatile tool to control the two-dimensional electron gas (2DEG) density in the well. A $\mathrm{Li}\mathrm{Nb}{\mathrm{O}}_{3}$ piezoelectric resonator imparts a MHz-frequency oscillating piezoelectric field with a controllable ratio of the in-plane and the vertical field components to a 2DEG placed in close proximity to the plate surface. This allows us to dynamically tune the charge state in the plane of the QW and to influence the photoluminescence spectra. It is found that spatially distributed r…
Spatiotemporal carrier dynamics in quantum wells under surface acoustic waves
2004
We present a theoretical study of transport and recombination of electrons and holes in quantum wells under the piezoelectric field induced by a surface acoustic wave (SAW). Our model calculations, which include free carriers and excitons in the framework of the drift-diffusion equations, describe the spatial and time dependences of the photoluminescence intensity on excitation density and SAW amplitude, and show overall agreement with recent microphotoluminescence experiments performed on GaAs/(Al,Ga)As quantum wells and quantum wires.
Quantum dot state initialization by control of tunneling rates
2019
We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential selectivity of the tunnel coupling enables loading into specific quantum dot states by tuning independently energy and rates. While for the single-electron case orbital relaxation leads to fast transition into the ground state, for electron pairs triplet-to-singlet relaxation is suppressed by long spin-flip times. This enables the fast gate-controlled initialization of either a singlet or a triplet electron pair state in a quantum dot with broad potential applicati…
Triple magnetopolarons in quantum wells
1997
We derive the equations for eigenstates and eigenenergies of a triple magnetopolaron in quantum-well structures. An iteration procedure for obtaining the wave function and energy including the contributions of diagrams with crossing phonon lines is given. We show that under conditions of exact resonance the middle energy branch of the triply split magnetopolaron state consists of only two out of three bare states. We suggest the experimental verification of this prediction.
Continuum and discrete excitation spectrum of single quantum rings
2005
Photoluminescence and excitation of the photoluminescence spectroscopy has been performed in single InGaAs self-assembled quantum rings embedded in a field effect structure device. To determine their electronic structure, bias-dependent optical transitions have been analyzed both, for individual quantum rings, and for the averaged ensemble. Our results are compared with a theoretical model, and also with results reported by other authors studying similar nanostructures.
Arrays of normal metal tunnel junctions in weak Coulomb blockade regime
1995
Universal features of I–V characteristics of one‐dimensional arrays of normal metal tunnel junctions have been tested against inhomogenities in the junction parameters, number of junctions in the array, and magnetic field. We find that the differential conductance versus bias voltage obeys the analytic form to within 1% if the fabrication errors are smaller than 10% in junction areas, and if the array has more than ten junctions. Furthermore, the universal relation is insensitive to magnetic field at least up to 8 T.