6533b7d1fe1ef96bd125c46d
RESEARCH PRODUCT
Quantum dot state initialization by control of tunneling rates
Hans Werner SchumacherThomas GersterVyacheslavs KashcheyevsTobias WenzJevgeny KlochanFrank Hohlssubject
PhysicsElectron pairCondensed Matter - Mesoscale and Nanoscale PhysicsFOS: Physical sciences02 engineering and technologyElectronCondensed Matter::Mesoscopic Systems and Quantum Hall Effect021001 nanoscience & nanotechnology01 natural sciencesMolecular physicsQuantum technologyQuantum dotMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesRelaxation (physics)Singlet state010306 general physics0210 nano-technologyGround stateQuantum tunnellingdescription
We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential selectivity of the tunnel coupling enables loading into specific quantum dot states by tuning independently energy and rates. While for the single-electron case orbital relaxation leads to fast transition into the ground state, for electron pairs triplet-to-singlet relaxation is suppressed by long spin-flip times. This enables the fast gate-controlled initialization of either a singlet or a triplet electron pair state in a quantum dot with broad potential applications in quantum technologies.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-03-06 | Physical Review B |