Search results for "Hall effect"
showing 10 items of 702 documents
Crystal structure and Hirshfeld surface analysis of (E)-1-[2,2-dichloro-1-(4-nitrophenyl)ethenyl]-2-(4-fluorophenyl)diazene
2019
The dihedral angle between the 4-fluorophenyl ring and the nitro-substituted benzene ring of the title compound is 63.29 (8)°. In the crystal, molecules are linked by C—H⋯O hydrogen bonds into chains parallel to the c axis. The crystal packing is further stabilized by C—Cl⋯π, C—F⋯π and N—O⋯π interactions
Crystal structure and Hirshfeld surface analysis of 2-[(1,3-benzoxazol-2-yl)sulfanyl]-N-(2-methoxyphenyl)acetamide
2019
Akkurt, Mehmet/0000-0003-2421-0929; Saylam, Merve/0000-0002-7602-4565
Crystal structure and Hirshfeld surface analysis of (E)-3-[(4-fluorobenzylidene)amino]-5-phenylthiazolidin-2-iminium bromide
2019
TARAMAPUBMED TARAMASCOPUS TARAMAWOS In the cation of the title salt, C16H15FN3S+·Br−, the phenyl ring is disordered over two sets of sites with a refined occupancy ratio of 0.503 (4):0.497 (4). The mean plane of the thiazolidine ring makes dihedral angles of 13.51 (14), 48.6 (3) and 76.5 (3)° with the fluorophenyl ring and the major- and minor-disorder components of the phenyl ring, respectively. The central thiazolidine ring adopts an envelope conformation. In the crystal, centrosymmetrically related cations and anions are linked into dimeric units via N—H...Br hydrogen bonds, which are further connected by weak C—H...Br hydrogen bonds into chains parallel to [110]. Hirshfeld surface an…
Two‐Dimensional Electron Gas Effects on the Photoluminescence from a Nonintentionally Doped AlGaN/GaN Heterojunction
2002
Photoluminescence measurements on an AlGaN/GaN single heterojunction (SH), where piezoelectric and spontaneous polarization effects confine a two-dimensional electron gas (2DEG), are presented. Well-defined emissions between the bulk excitonic transitions and their LO-phonon replica are attributed to spatially indirect excitons located close to the interface. The strong interfacial electric field separates photogenerated holes and electrons, weakening their Coulomb interaction and causing a blueshift with increasing excitation intensity due to carrier population effects. In addition, direct experimental proof is obtained by applying an electric field normal to the interface. An energy shift…
A Composite Phononic Crystal Design for Quasiparticle Lifetime Enhancement in Kinetic Inductance Detectors
2020
A nanoscale phononic crystal filter (reflector) is designed for a kinetic inductance detector where the reflection band is matched to the quasiparticle recombination phonons with the aim to increase quasiparticle lifetime in the superconducting resonator. The inductor is enclosed by a 1-μm-wide phononic crystal membrane section with two simple hole patterns that each contain a partial spectral gap for various high-frequency phonon modes. The phononic crystal is narrow enough for low-frequency thermal phonons to propagate unimpeded. With 3D phonon scattering simulation over a 40 dB attenuation in transmitted power is found for the crystal, which is estimated to give a lifetime enhancement of…
Topological surface wave metamaterials for robust vibration attenuation and energy harvesting
2021
International audience; We propose topological metamaterials working in Hertz frequency range, constituted of concrete pillars on the soil ground in a honeycomb lattice. Based on the analog of the quantum valley Hall effect, a non-trivial bandgap is formed by breaking the inversion symmetry of the unit cell. A topological interface is created between two different crystal phases whose robustness against various defects and disorders is quantitatively analyzed. Finally, we take advantage of the robust and compact topological edge state for designing a harvesting energy device. The results demonstrate the functionality of the proposed structure for both robust surface vibration reduction and …
Detector's quantum backaction effects on a mesoscopic conductor and fluctuation-dissipation relation
2017
International audience; When measuring quantum mechanical properties of charge transport in mesoscopic conductors, backaction effects occur. We consider a measurement setup with an elementary quantum circuit, composed of an inductance and a capacitor, as detector of the current flowing in a nearby quantum point contact. A quantum Langevin equation for the detector variable including backaction effects is derived. Differences with the quantum Langevin equation obtained in linear response are pointed out. In this last case, a relation between fluctuations and dissipation is obtained, provided that an effective temperature of the quantum point contact is defined.
Crystal structure and Hirshfeld surface analysis of (2E)-3-(3-bromo-4-fluorophenyl)-1-(3,4-dimethoxyphenyl)prop-2-en-1-one
2018
The title compound is constructed from two aromatic rings (3-bromo-4-fluorophenyl and 3,4-dimethoxyphenyl), which are linked by a C=C—C(=O)—C enone bridge and form a dihedral angle of 17.91 (17)°. In the crystal, molecules are linked by C—H⋯O hydrogen bonds enclosing rings of (14) graph-set motif to form layers parallel to (10).
Co-reductive fabrication of carbon nanodots with high quantum yield for bioimaging of bacteria
2018
A simple and straightforward synthetic approach for carbon nanodots (C-dots) is proposed. The strategy is based on a one-step hydrothermal chemical reduction with thiourea and urea, leading to high quantum yield C-dots. The obtained C-dots are well-dispersed with a uniform size and a graphite-like structure. A synergistic reduction mechanism was investigated using Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The findings show that using both thiourea and urea during the one-pot synthesis enhances the luminescence of the generated C-dots. Moreover, the prepared C-dots have a high distribution of functional groups on their surface. In this work, C-dots proved …
Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition
2010
The double sign anomaly of the Hall coefficient has been studied in p -doped and n -doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 °C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n -doped film, disappearing after annealing at 500 °C, while p -doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly wi…