Search results for "II-VI semiconductors"

showing 3 items of 13 documents

Correlation between Zn vacancies and photoluminescence emission in ZnO films.

2006

Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es

PhotoluminescenceMaterials scienceAstrophysics::High Energy Astrophysical PhenomenaEdge regionAnalytical chemistrySemiconductor thin filmsGeneral Physics and AstronomyPositron annihilation spectroscopyCondensed Matter::Materials Science:FÍSICA [UNESCO]Zinc compoundsMetalorganic vapour phase epitaxyDeposition (law)Positron annihilationCondensed matter physicsCondensed Matter::OtherPhysicsWide-bandgap semiconductorpositron annihilationUNESCO::FÍSICACacancies (crystal)II-VI semiconductorsWide band gap semiconductorsZn vacanciesMOCVDSapphireZnOphotoluminescenceZinc compounds ; II-VI semiconductors ; Wide band gap semiconductors ; Semiconductor thin films ; Positron annihilation ; Cacancies (crystal) ; MOCVD
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Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

2002

5 páginas, 4 figuras, 1 tabla.

PhotoluminescenceMaterials sciencePhononExcitonBinding energyPolaritonsGeneral Physics and AstronomyMolecular physicssymbols.namesakeCondensed Matter::Materials Science:FÍSICA [UNESCO]PolaritonZinc compoundsThin filmPhotoluminescencebusiness.industrySemiconductor epitaxial layersUNESCO::FÍSICAII-VI semiconductorsZinc compounds ; II-VI semiconductors ; Raman spectra ; Photoluminescence ; Excitons ; Polaritons ; Semiconductor epitaxial layerssymbolsOptoelectronicsExcitonsRaman spectrabusinessRaman spectroscopyRaman scattering
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Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.

2006

Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…

PhotoluminescenceMaterials scienceRutherford backscatteringCadmium compoundsUNESCO::FÍSICAAnalytical chemistrySemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsSurface structureChemical vapor depositionRutherford backscattering spectrometryEpitaxyVapour phase epitaxial growthCrystallographyLattice constantZinc compounds ; Cadmium compounds ; II-VI semiconductors ; MOCVD ; Vapour phase epitaxial growth ; Semiconductor epitaxial layers ; Rutherford backscattering ; Photoluminescence ; Surface structure ; Buffer layers:FÍSICA [UNESCO]MOCVDSapphireBuffer layersMetalorganic vapour phase epitaxyZinc compoundsThin filmPhotoluminescence
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