Search results for "IRRADIATION"
showing 10 items of 1012 documents
Formation of optically active oxygen deficient centers in Ge-doped SiO2 by γ- and β-ray irradiation
2010
Abstract We report an experimental study on the comparison between the γ- or β-ray induced Ge related point defects in Ge-doped silica. Silica samples doped with ∼2.2 1017 Ge atoms/cm3 produced with the sol–gel technique have been irradiated with γ-ray or with β-ray. The effects of the irradiation have been investigated by optical absorption, photoluminescence and electron paramagnetic resonance spectroscopy in order to evaluate the generation and the dependence on dose of the Ge(1), E’Ge, GLPC (Germanium lone pair center) and H(II) point defects. No relevant differences between the concentrations of γ- or β-ray induced Ge(1) and E’Ge point defects have been observed and, in addition, it ha…
Concentration growth and thermal stability of gamma-ray induced germanium lone pair center in Ge-doped sol–gel a-SiO2
2009
Abstract We report an experimental study of the concentration growth by γ-ray irradiation of germanium lone pair center (GLPC) in 10 4 part per million molar Ge-doped sol–gel silica. The data show that γ-ray induced GLPC concentration increases linearly up to ∼5 MGy and then it seems to reach a limit value. In addition to the dose dependence, we have studied the thermal stability of the radiation induced GLPC in ambient atmosphere up to 415 °C. We found that the concentration of this latter GLPC starts to decrease at ∼300 °C, at variance to native GLPC, suggesting that the annealing is related to irradiation products. After the thermal treatments the photoluminescence (PL) activity of the γ…
UV cathodoluminescence of crystalline α-quartz at low temperatures
2004
Two luminescence bands in the UV range were detected in crystalline a-quartzunder electron beam excitation (6 kV, 3–5mA). One band is situated at 5 eV and could be observed in pure samples. Its intensity increases with cooling below 100 K and undergoes saturation below 40 K alongside a slow growth with the time of irradiation at 9 K. The decay curve of the band at 5 eV contains two components, a fast (o10 ns) and a slow one in the range of 200ms. The photoluminescence band at 5 eV with a similar temperature dependence was found in previously neutron-irradiated crystalline a-quartz. Therefore, the band at 5 eV was attributed to host material defects in both irradiation cases. The creation me…
Luminescence of polymorph crystalline and glassy SiO2, GeO2: A short review
2009
Studies of SiO 2 and GeO 2 crystals with α-quartz and rutile structures were performed during last two decades. The goal of such studies was comparison of properties with those of glassy modifications of these crystals. Luminescence of oxygen deficient centers in these glassy materials was found to resemble the luminescence of the rutile-type modification rather than α-quartz modification. In α-quartz, similar luminescence centers appear after damaging irradiation by electron beam at low temperatures (<60 K) or at ambient temperatures after gamma or neutron irradiation.
Photoluminescent and paramagnetic centers in gamma irradiated porous silica
2005
Abstract The photoluminescence and electron spin resonance properties of gamma irradiated (up to 500 kGy) porous silica are reported. By exciting at 5.6 eV a photoluminescence contribution can be detected before irradiation, peaked at about 4.1 eV. Gamma irradiation causes the generation of the E′ centers (about 1 × 1014 defects cm−3) of paramagnetic hole centers and modifies the photoluminescence properties of the sample: the emission amplitude decreases and three contributions can be singled out at about 3.3, 3.8 and 4.4 eV.
UV and yellow luminescence in phosphorus doped crystalline and glassy silicon dioxide
2015
Abstract Luminescence of phosphorus doped crystalline α-quartz and phosphosilicate glass with content 3P2O5·7SiO2 was studied. Water and OH groups are found by IR spectra in these materials. The spectrum of luminescence contains many bands in the range 1.5–5.5 eV. The luminescence bands in UV range at 4.5–5 eV are similar in those materials. Decay duration in exponential approximation manifests a time constant about 37 ns. Also a component in µs range was detected. PL band of µs component is shifted to low energy with respect to that of ~37 ns component. This shift is about 0.6 eV. It is explained as singlet–triplet splitting of excited state. Below 14 K increase of luminescence kinetics du…
Facile synthesis of L-cysteine functionalized graphene quantum dots as a bioimaging and photosensitive agent
2021
Nowadays, a larger number of aggressive and corrosive chemical reagents as well as toxic solvents are used to achieve structural modification and cleaning of the final products. These lead to the production of residual, waste chemicals, which are often reactive, cancerogenic, and toxic to the environment. This study shows a new approach to the modification of graphene quantum dots (GQDs) using gamma irradiation where the usage of reagents was avoided. We achieved the incorporation of S and N atoms in the GQD structure by selecting an aqueous solution of L-cysteine as an irradiation medium. GQDs were exposed to gamma-irradiation at doses of 25, 50 and 200 kGy. After irradiation, the optical,…
Gamma ray induced 11.8 mT ESR doublet in natural silica
1998
Abstract We report electron spin resonance (ESR) measurements in natural and synthetic vitreous SiO2 samples irradiated by γ rays. An 11.8 mT doublet, asymmetrically centered on the resonance line of the E′ center, was detected only in natural samples. The intensity of this doublet as a function of γ exposure tends to saturate for doses as low as 0.2 Mrad and is not related to the growth kinetics of the E′ centers. Photoluminescence (PL) measurements on the same samples have shown that two emissions at 3.15 and 4.26 eV bleach with the same kinetics as does the 11.8 mT doublet on increasing the γ ray dose. We tentatively suggest the presence of a conversion mechanism, activated by γ irradiat…
Defect formation in photochromic Ca2SnO4: Al3+
2021
Abstract Photoluminescence, photochromism and defect formation were analysed in Ca2SnO4 doped with 0–20% Al3+. Bright cyan luminescence attributed to Sn2+ was detected in all samples. Introduction of Al3+ in Ca2SnO4 led to an enhancement of Sn2+ emission by up to 70% in comparison with an undoped sample. After exposure to UV irradiation, two absorbance bands centered at 520 nm and 710 nm and three paramagnetic defects were observed in Al3+-doped Ca2SnO4 samples. The paramagnetic centers were identified as a hole type and two different Sn3+ centers. Electron paramagnetic resonance (EPR) data suggested that one of the Sn3+ centers is located in a close proximity of Al3+. Analysis of the stabi…
Spectral properties of AIN ceramics
1997
Spectral properties of oxygen-related defects are studied in AIN ceramics at room temperatures. Original results concerning the photoluminescence under ultraviolet irradiation are obtained; they include the excitation spectrum and irradiation dose effects. The ultraviolet light energy storage and its release under irradiation with visible or infrared light in the form of the photostimulated luminescence has been observed in AIN ceramics. The properties of the photostimulated luminescence such as creation, emission and stimulation spectra are reported. For the explanation of the experimental results the mechanism of the recombination luminescence involving the oxygen-related defect is propos…