Search results for "IRRADIATION"
showing 10 items of 1012 documents
Controlling the Phase Segregation in Mixed Halide Perovskites through Nanocrystal Size
2019
Mixed halide perovskites are one of the promising candidates in developing solar cells and light-emitting diodes (LEDs), among other applications, because of their tunable optical properties. Nonetheless, photoinduced phase segregation, by formation of segregated Br-rich and I-rich domains, limits the overall applicability. We tracked the phase segregation with increasing crystalline size of CsPbBr3–xIx and their photoluminescence under continuous-wave laser irradiation (405 nm, 10 mW cm–2) and observed the occurrence of the phase segregation from the threshold size of 46 ± 7 nm. These results have an outstanding agreement with the diffusion length (45.8 nm) calculated also experimentally f…
Modification of Structural and Luminescence Properties of Graphene Quantum Dots by Gamma Irradiation and Their Application in a Photodynamic Therapy
2015
Herein, the ability of gamma irradiation to enhance the photoluminescence properties of graphene quantum dots (GQDs) was investigated. Different doses of gamma-irradiation were used on GQDs to examine the way in which their structure and optical properties can be affected. The photoluminescence quantum yield was increased six times for the GQDs irradiated with high doses compared to the nonirradiated material. Both photoluminescence lifetime and values of optical band gap were increased with the dose of applied gamma irradiation. In addition, the exploitation of the gamma-irradiated GQDs as photosensitizers was examined by monitoring the production of singlet oxygen under UV illumination. T…
Luminescence of non-bridging oxygen hole centers as a marker of particle irradiation of {\alpha}-quartz
2021
The origin of the "red" emission bands in the 600 nm-700 nm region, observed in quartz crystals used for luminescence dating and environmental dosimetry, is still controversial. Their reported spectral and lifetime characteristics are often similar to those of oxygen dangling bonds ("non-bridging oxygen hole centers, NBOHCs") in glassy silicon dioxide. The presence of these "surface radical type" centers in quartz crystal requires sites with highly disordered local structure forming nano-voids characteristic to the structure of glassy SiO2. Such sites are introduced in the tracks of nuclear particles ({\alpha}-irradiation, neutrons, ions). In case of electrons they are created only at large…
Alpha and deuteron irradiation effects on silica nanoparticles
2014
We present an experimental investigation focused on the effects of alpha and deuteron irradiation on different silica nanoparticles. The study has been devoted also to characterize the induced point defects and the eventual structural modifications to evaluate the effects of the different irradiation source in comparison with the bulk materials. After irradiation up to about 10^16 ions cm^-2, we performed electron paramagnetic resonance (EPR), photoluminescence (PL), infrared (IR) absorption, Raman, and atomic force microscopy (AFM) measurements. We found that the two types of irradiation qualitatively induce comparable effects. Furthermore, irradiation generates the socalled twofold coordi…
Influence of fluorine on the fiber resistance studied through the nonbridging oxygen hole center related luminescence
2013
The distribution of Non-Bridging Oxygen Hole Centers (NBOHCs) in fluorine doped optical fibers was investigated by confocal microluminescence spectroscopy, monitoring their characteristic 1.9 eV luminescence band. The results show that these defects are generated by the fiber drawing and their concentration further increases after c irradiation. The NBOHC concentration profile along the fiber provides evidence for an exponential decay with the fluorine content. This finding agrees with the role of fluorine in the fiber resistance and is discussed, from the microscopic point of view, by looking at the conversion mechanisms from strained bonds acting as precursors.
Comparison of &#x03B3; and &#x03B2;-ray irradiation effects in sol-gel Ge-doped SiO<inf>2</inf>
2009
We report an experimental study on the comparison between the γ or β ray induced Ge related point defects in Ge doped silica. Silica samples doped with ∼2.2 1017 Ge atoms/cm3 produced with the sol-gel technique have been irradiated. The effects of the irradiation have been investigated by optical absorption, photoluminescence and electron paramagnetic resonance spectroscopy in order to evaluate the generation and the dependence on dose of the Ge(1), E'Ge, Germanium Lone Pair Center (GLPC) and H(II) point defects. No relevant differences between the concentrations of γ or β ray induced Ge(1) and E'Ge point defects have been observed. In addition, it is found that both irradiations are able t…
Inhomogeneous width of oxygen-deficient centers induced by electron irradiation of silica
2009
We report a study of the luminescence activity of oxygen-deficient centers stabilized in as-grown synthetic silica, as compared with the same defects induced by $\ensuremath{\beta}$ irradiation at increasing doses, ranging from $1.2\ifmmode\times\else\texttimes\fi{}{10}^{3}$ to $5\ifmmode\times\else\texttimes\fi{}{10}^{6}\text{ }\text{kGy}$. We experimentally observe a progressive broadening of the luminescence band with increasing total electron dose released on samples. By analyzing our data within a theoretical model capable of separating homogeneous and inhomogeneous contribution to the total luminescence linewidth, we observe that the increasing of the width is entirely ascribable to t…
Twofold coordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2
2008
We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by gamma radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern wr…
Microwave radiation effect on the synthesis of cadmium sulphide nanoparticles in water in oil microemulsion: a preliminary study at different frequen…
2004
AbstractCadmium sulphide nanoparticles have been synthesised in water/sodium bis (2-ethylhexyl) sulfosuccinate (AOT)/n- heptane microemulsions kept at 30 °C by microwave irradiation coupled with water-cooling and in conventional thermostatic conditions at the same temperature. The study has been performed exposing the reaction media to microwave radiation at five different frequencies (2.45, 2.85, 8, 12 and 18 GHz). For each frequency, a suitable microwave exposure set-up has been assembled. During the growth process, the dimensions of the nanoparticles have been characterised by means of UV-Vis spectroscopy. At the end of the growth process, the surface morphology of the nanoparticles has …
Generation of oxygen deficient point defects in silica by γ and β irradiation
2007
We report an experimental study of the effects of y and β irradiation on the generation of a point defect known as ODC(II) in various types of commercial silica (a-SiO 2 ). The ODC(II) has been detected by means of photoluminescence (PL) spectroscopy measuring the PL band centered at 4.4 eV and excited at 5.0 eV associated to this defect. Our experiments show that ODC(II) are induced in all the investigated materials after irradiation at doses higher than 5 x 10 2 kGy. A good agreement is observed between the efficiencies of generation of ODC(II) under y and β irradiation, enabling a comprehensive study up to the dose of 5 x 10 6 kGy. Two different growth rates, one in the low and one in th…