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CsPbX3/SiOx (X = Cl, Br, I) monoliths prepared via a novel sol-gel route starting from Cs4PbX6 nanocrystals

2019

We developed a facile synthesis of nanocomposite powders of CsPbX3 nanocrystals (NCs) embedded in silica. The synthesis starts from colloidal Cs4PbX6 NCs that are mixed with tetraethyl orthosilicate in the presence of nitric acid, which triggers the sol-gel reaction yielding the formation of SiOx and the conversion of starting NCs into CsPbX3 ones. The overall reaction delivers CsPbX3 NCs encased in a silica matrix. The resulting CsPbX3/SiOx nano-composite powders exhibited enhanced moisture and thermal stability in air. Also, when mixing different CsPbX3/SiOx samples having diverse anion compositions, no interparticle anion exchange processes were observed, which is a further indication th…

Deformation behavior and interfacial sliding in carbon/copper nanocomposite films deposited by high power DC magnetron sputtering

2015

Abstract Amorphous carbon–copper nanocomposite films with a carbon content from 7 to 40 at.% have been deposited onto steel, silicon and glass substrates using a high power (> 60 W/cm 2 ) and high-rate DC magnetron sputtering technique. XRD, Raman spectroscopy and TEM results confirm that the deposited films consist of copper nanograins (size

<title>Metallic and semiconducting nanowires: properties and architectures</title>

2003

Nanowires are expected to play an important role in future electronic, optical devices and nanoelectromechanical devices. Measuring the electrical and mechanical properties of nanowires is however a difficult task due to their small dimensions. Here we report the use of an in-situ microscopy technique, which combines transmission electron microscopy (TEM) with scanning probe microscopy (SPM), to investigate the electrical and mechanical properties of metallic and semiconductor nanowires. Additionally, in this paper we describe a novel approach for synthesizing mesoporous silicas with tunable pore diameters, wall thickness and pore spacings that can be used as tempates for the assembly of se…

In-situ study of multi-phase indium nanoparticle growth on/into CuPcF4 organic thin film in ultra-high vacuum conditions

2021

Abstract We study the in-situ growth of a nanocomposite material consisting of a thin CuPcF4 film and multiphase/multidimensional indium nanoparticles, self-organizing on the surface and in the bulk, at various stages of thermal deposition of metal on an organic film under ultrahigh vacuum conditions. The analysis of high-resolution transmission electron microscopy (HR-TEM) images provided valuable information about the evolution of morphology, size, density, and distribution of indium nanoparticles upon indium deposition. These 2D/3D ultra-small nano-objects turned out to have not only body-centered tetragonal (bct) crystal structure, typical for bulk indium, but also unusual face-centered…

Au–NiOx nanocomposite for hot electron-assisted plasmonic photocatalysis

2020

Nanocomposites of metal–oxide semiconductors containing Au nanoparticles are emerging multifunctional materials for sunlight-driven highly efficient photocatalysis. Here we report a solution-processed nanocomposite synthesis of Au–NiOx nanocomposite films by slot-die coating and plotter printing in a straightforward in situ synthesis approach. Our study demonstrated a significantly enhanced photocatalytic decomposition reaction of MO upon exposure of Au–NiOx films to a sunlight simulator. The excellent photocatalytic activity is ascribed to the generation of hot carriers after LSPR excitation in Au NPs. Suitable band alignment between the valence band of NiOx and the Fermi level of Au NPs l…

Real-time manipulation of gold nanoparticles inside a scanning electron microscope

2011

Abstract The forces needed to overcome static friction and move 150 nm diameter Au nanoparticles on an oxidized Si substrate were measured in Normal and Shear oscillation modes inside a scanning electron microscope (SEM) in real time. The experimental setup consisted of a quartz tuning fork (QTF) mounted onto a high-precision 3D nanomanipulator used with a glued silicon or tungsten tip as a force sensor. Static friction was found to range from tens of nN to several hundred nN. Large variations in static friction values were related to differences in particle shape. Kinetic friction tended to be close to the detection limit and in most cases did not exceed several nN. The influence of therma…

Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

2016

Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the…

Growth of gold tips onto hyperbranched CdTe nanostructures

2008

Energy and charge transfer in nanoscale hybrid materials.

2015

Hybrid materials composed of colloidal semiconductor quantum dots and π-conjugated organic molecules and polymers have attracted continuous interest in recent years, because they may find applications in bio-sensing, photodetection, and photovoltaics. Fundamental processes occurring in these nanohybrids are light absorption and emission as well as energy and/or charge transfer between the components. For future applications it is mandatory to understand, control, and optimize the wide parameter space with respect to chemical assembly and the desired photophysical properties. Accordingly, different approaches to tackle this issue are described here. Simple organic dye molecules (Dye)/quantum…

Structural and Electrical Transport Properties of Si doped GaN nanowires

2016

The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have revealed a controlled doping with resistivity from 2 × 10−2 to 10−3 Ω.cm for Si doped NWs. Field effect tra…