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RESEARCH PRODUCT

Structural and Electrical Transport Properties of Si doped GaN nanowires

Nicolas MollardZhihua FangJulien PernotElena Rozas-jimenezBruno DaudinFabrice DonatiniEric RobinAna Cros

subject

Materials scienceNanostructureSiliconbusiness.industryDopingNanowirechemistry.chemical_elementGallium nitridechemistry.chemical_compoundchemistryElectrical resistivity and conductivityOptoelectronicsField-effect transistorbusinessMolecular beam epitaxy

description

The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have revealed a controlled doping with resistivity from 2 × 10−2 to 10−3 Ω.cm for Si doped NWs. Field effect transistor (FET) measurements combined with finite element simulation have shown the high mobility of carriers in the non-intentionally doped (NID) NWs.

yearjournalcountryeditionlanguage
2016-06-012016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
https://doi.org/10.1109/iciprm.2016.7528770