0000000000061983
AUTHOR
Nicolas Mollard
showing 4 related works from this author
Si Donor Incorporation in GaN Nanowires
2015
With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…
Dopant radial inhomogeneity in Mg-doped GaN nanowires
2018
International audience; Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the po…
Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC
2019
The formation of a self-limited metallic bilayer is reported during the growth of GaN by plasma-assisted molecular beam epitaxy on graphene on (0001) SiC. Depending on growth conditions, this layer may consist of either Ga or In, which gets intercalated between graphene and the SiC surface. Diffusion of metal atoms is eased by steps at SiC surface and N plasma induced defects in the graphene layer. Energetically favorable wetting of the (0001) SiC surface by Ga or In is tentatively assigned to the breaking of covalent bonds between (0001) SiC surface and carbon buffer layer. As a consequence, graphene doping and local strain/doping fluctuations decrease. Furthermore, the presence of a metal…
Structural and Electrical Transport Properties of Si doped GaN nanowires
2016
The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have revealed a controlled doping with resistivity from 2 × 10−2 to 10−3 Ω.cm for Si doped NWs. Field effect tra…