6533b830fe1ef96bd1296581
RESEARCH PRODUCT
Dopant radial inhomogeneity in Mg-doped GaN nanowires
Alexandra-madalina SiladieBruno DaudinPierre-henri JouneauNúria GarroBastien BonefIsabelle MoutonCatherine BougerolAna CrosNicolas MollardL. AmichiEric RobinAdeline Greniersubject
Materials scienceHydrogenNanowirechemistry.chemical_elementBioengineering02 engineering and technologyAtom probe01 natural scienceslaw.inventionsymbols.namesakelaw0103 physical sciencesGeneral Materials ScienceElectrical and Electronic Engineeringgallium nitride nanowires010302 applied physics[PHYS]Physics [physics]Dopantbusiness.industryMechanical EngineeringDopingGeneral Chemistryspatialinhomogeneity of dopants021001 nanoscience & nanotechnologymagnesium incorporationchemistryatom probe tomographyMechanics of MaterialsRaman spectroscopysymbolsOptoelectronics0210 nano-technologyRaman spectroscopybusinessMolecular beam epitaxyLight-emitting diodedescription
International audience; Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-06-22 |