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RESEARCH PRODUCT
Si Donor Incorporation in GaN Nanowires
Bruno DaudinElena Rozas-jimenezNicolas MollardZhihua FangZhihua FangJulien PernotJulien PernotJulien PernotFabrice DonatiniFabrice DonatiniEric RobinAna Crossubject
Electron mobilityMaterials scienceNanowireBioengineeringNanotechnology02 engineering and technology01 natural sciencesElectrical resistivity and conductivity0103 physical sciencesGeneral Materials ScienceSpectroscopyComputingMilieux_MISCELLANEOUS010302 applied physics[PHYS]Physics [physics]business.industryMechanical EngineeringDopingGeneral ChemistryRadius021001 nanoscience & nanotechnologyCondensed Matter PhysicsOptoelectronicsField-effect transistor0210 nano-technologybusinessMolecular beam epitaxydescription
With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a carrier concentration from 10(17) to 10(20) cm(-3). Field effect transistor (FET) measurements combined with finite element simulation by NextNano(3) software have put in evidence the high mobility of carriers in the nonintentionally doped (NID) NWs.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-10-01 |