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showing 10 items of 3539 documents

Selective quantification of humidity and ammonia by optical excitation of molecular semiconductor-doped insulator (MSDI) sensors

2015

MSDI (molecular semiconductor-doped insulator) ammonia sensors have been investigated using cyclic optical excitation as multi-signal generation method. This method enables a selective quantification of both humidity in the range of 30–70 %rh and ammonia concentration in the range of 0–30 ppm with a single sensor at room temperature.

Range (particle radiation)Ammoniachemistry.chemical_compoundMolecular semiconductorChemistryDopingAnalytical chemistryHumidityInsulator (electricity)Excitation2015 IEEE SENSORS
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UV LED Photo Electron Ionisation for MS and IMS

2009

AbstractA new MEMS ionisation source for spectrometry is presented on the basis of photo electron emission in silicon MEMS. Lanthanum hexaboride ceramic sample and thin nanolayer proved their suitability for photo electron emission in the desired photon energy range of 3.1eV to 3.9eV which correspond to industrially available UV LED. This ionisation source alternative to a Photoionisationdetector (PID) is inspected of its gas ionisation behaviour using gases with an ionisation potential over and under an energy of 10,6eV. To enable the ionisation of the gases the emitted electrons were accelerated to a well-defined energy. The results of these investigations are comparable to the UV dischar…

Range (particle radiation)Gas-discharge lampSiliconChemistry(all)Analytical chemistrychemistry.chemical_elementGeneral MedicineElectronLanthanum hexaboridePhoton energyMass spectrometrylaw.inventionlanthanum hexaboridechemistry.chemical_compoundchemistrylawIonizationChemical Engineering(all)photoemissionProcedia Chemistry
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The correlation of the 7.6 eV optical absorption band in pure fused silicon dioxide with twofold-coordinated silicon

1992

Abstract The optical absorption band at 7.6 eV, which appears in oxygen deficient pure silica, does not correlate with any ESR signal in non-irradiated samples. Longlasting illumination at 80 K in the range of its absorption leads to an increase of the absorption band at 5 eV. Subsequent heating to 290 K restores the initial absorption. These data can be explained as photodissociation and thermal recreation of a complex defect containing a twofold-coordinated silicon defect. This complex defect is responsible for the 7.6 eV absorption band.

Range (particle radiation)Materials scienceExtended X-ray absorption fine structureSiliconSilicon dioxidePhotodissociationAnalytical chemistrychemistry.chemical_elementCondensed Matter PhysicsPhotochemistryTwo-photon absorptionElectronic Optical and Magnetic Materialschemistry.chemical_compoundchemistryAbsorption bandMaterials ChemistryCeramics and CompositesAbsorption (electromagnetic radiation)Journal of Non-Crystalline Solids
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Photoluminescence study of radiative transitions in ZnTe bulk crystals

1998

Abstract This paper focuses on photoluminescence (PL) and selective photoluminescence (SPL) of ZnTe bulk crystals grown by the cold traveling heater method. The crystals exhibit a PL response with a much more intense excitonic zone than the one due to free-to-bound and donor–acceptor bands, denoting a good sample quality. In particular, we have investigated the Y 1 and Y 2 peaks which, in epitaxial layers, have usually been associated with structural defects. On bulk samples they have not been detected so far because of different masked mechanisms. SPL measurements show that the electrons are the most likely involved carriers for this emission. Additionally, the analysis of the PL variation…

Range (particle radiation)Materials sciencePhotoluminescencebusiness.industryMineralogyActivation energyElectronCondensed Matter PhysicsEpitaxyMolecular physicsInorganic ChemistrySemiconductorMaterials ChemistryRadiative transferbusinessLuminescenceJournal of Crystal Growth
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Finely tunable laser based on a bulk silicon wafer for gas sensing applications

2016

In this work a very simple continuously tunable laser based on an erbium ring cavity and a silicon wafer is presented. This laser can be tuned with very fine steps, which is a compulsory characteristic for gas sensing applications. Moreover the laser is free of mode hopping within a spectral range sufficiently wide to match one of the ro-vibrational lines of a target molecule. Here the proposed laser reached, at ∼1530 nm, a continuous tuning range of around 950 pm (>100 GHz) before mode hopping occurred, when a silicon wafer of 355 μm thickness was used. Additionally, the laser can be finely tuned with small tuning steps of <12 pm, achieving a resolution of 84.6 pm °C-1 and by using a therm…

Range (particle radiation)Materials sciencePhysics and Astronomy (miscellaneous)Hybrid silicon laserbusiness.industrychemistry.chemical_element02 engineering and technologyLaser01 natural scienceslaw.invention010309 opticsErbiumWavelength020210 optoelectronics & photonicsOpticschemistrylaw0103 physical sciences0202 electrical engineering electronic engineering information engineeringWaferbusinessInstrumentationFabry–Pérot interferometerTunable laserLaser Physics Letters
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Long-Term Stability of (Ti/Zr/Hf)CoSb1−xSnxThermoelectric p-Type Half-Heusler Compounds Upon Thermal Cycling

2015

The effect of thermal cycling upon the thermoelectric performance of state-of-the-art p-type half-Heusler materials was investigated and correlated with the impact on the structural properties. We simulated a heat treatment of the material similar to actual applications in the mid-temperature range, such as occurs during the energy conversion from an automotive exhaust pipe. We compared three different compositions based on the (Ti/Zr/Hf)CoSb1−xSnx system. The best and most reliable performance was achieved using Ti0.5Hf0.5CoSb0.85Sn0.15, which reached a maximum figure of merit ZT of 1.1 at 700 °C. The intrinsic phase separation and resulting microstructuring, which are responsible for the …

Range (particle radiation)Materials sciencebusiness.industryMetallurgyThermodynamicsTemperature cyclingThermoelectric materialsGeneral EnergySemiconductorThermoelectric effectFigure of meritEnergy transformationThermal stabilitybusinessEnergy Technology
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Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry

2019

In this study of nanoscale etching for state-of-the-art device technology, the importance of surface chemistry, in particular the nature of the surface oxide, is demonstrated for two III-V materials. Striking differences in etching kinetics were found for GaAs and InP in sulphuric and hydrochloric acidic solutions containing hydrogen peroxide. Under similar conditions, etching of GaAs was much faster, while the dependence of the etch rate on pH, and on H2O2 and acid concentrations also differed markedly for the two semiconductors. Surface analysis techniques provided information on the product layer present after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin st…

Reaction mechanismta221OxideGeneral Physics and Astronomysurface chemistry02 engineering and technologyreaktiomekanismit010402 general chemistry01 natural scienceschemistry.chemical_compoundpuolijohteetEtching (microfabrication)Hydrogen peroxideDissolutionta114nanoelektroniikkabusiness.industryGaAsInPfungitechnology industry and agricultureSurfaces and InterfacesGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter Physicspintakemia0104 chemical sciencesSurfaces Coatings and Filmsreaction mechanismsSemiconductorchemistryChemical engineeringIII-V oxideHydroxidenanoscale etching0210 nano-technologybusinessStoichiometryApplied Surface Science
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Fundamentals of photocatalysis: The role of the photocatalysts in heterogeneous photo-assisted reactions

2021

Abstract This chapter provides some general definitions of heterogeneous photocatalysis and evaluates its performance, which is influenced by the parameters most closely related to the properties of the solid material that acts as a photocatalyst. It also discusses aspects of heterogeneous photocatalytic reactions and explains the properties that influence photoactivity. Finally, the chapter examines thermodynamic and kinetic features, including mechanistic details and parameters to define the reaction rate and correlates them to the effects of the interaction of light with the photocatalyst surface and adsorption-desorption of species involved in heterogeneous photo-assisted reactions.

Reaction rateMaterials scienceChemical engineeringPhoto assistedPhotocatalysisCatalysis Semiconductor Photo-produced couples General definitionsSolid material
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Electrical transduction in phthalocyanine-based gas sensors: from classical chemiresistors to new functional structures

2009

Phthalocyanines are organic-based materials which have attracted a lot of research in recent times. In the field of sensors, they present interesting and valuable potentialities as sensing elements for real gas sensor applications. In the present article, and taking some of our experiments as representative examples, we review the different ways of transduction applied to such applications. Some of the new tendencies and transducers for gas sensing based on phthalocyanine derivatives are also reported. Among them, electrical transduction (resistors, field-effect transistors, diodes, etc.) has been, historically, the most commonly exploited way for the detection and/or quantification of gas…

Real gasbusiness.industryChemistryTransistorNanotechnologyGeneral Chemistrylaw.inventionPhthalocyanine derivativeschemistry.chemical_compoundTransducerlawMolecular semiconductorPhthalocyanineOptoelectronicsResistorbusinessMolecular materialsJournal of Porphyrins and Phthalocyanines
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DANNO, RISARCIMENTO E RICONOSCIMENTO DELL’“ALTRO” NELLA GESTIONE DEI CONFLITTI IN OMERO

2019

Atto ingiusto, reato? Nel mondo omerico abbiamo a che fare: 1. con atasthalìai (in Omero solo al plurale), cioè con “eccessi-volontari-e-consapevoli fondati-sulla-fiducia nella-propria-forza/capacità/potere”, di cui si è responsabili (mentre non si è responsabili o si è innocenti se si obbedisce a cause materiali/umane di forza maggiore), o 2. con àte, l’offuscamento mentale che rovina se stessi e a volte gli altri e che si è avuto per propria imprudenza, mancanza di calcolo o perché gli dei puniscono di una precedente offesa fatta loro. In quest’ultimo caso, si può rimediare oppure bisogna aspettare i tempi della divinità. Nel caso di offese ad altri uomini, bisogna risarcire materialmente…

Recognition of guilt and reconciliation in Ancient GreeceDanno-Grecia antica"Ate" in OmeroInjustice and compensation in Ancient GreeceIngiustizia e risarcimento-Grecia anticaDamage in Ancient GreeceAte in HomerAtasthaliai in Homer"Atasthaliai" in Omero.Settore L-FIL-LET/02 - Lingua E Letteratura GrecaRiconoscimento di colpa e riconciliazione-Grecia antica
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