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showing 10 items of 3539 documents

Experimental Studies Regarding the Mechanical Behaviour of Silicon-Coated and Uncoated P.A. 6.6 Fabrics

2014

These paper aims to present an experimental study for determining the mechanical properties of woven fabrics used for airbags manufacturing. In order to realise the study, there were chosen two types of fabric, one that is coated with silicon and one that is uncoated. The experimental tests that were carried out were uniaxial tension tests for samples extracted on the warp and on the weft direction, the Bias test, a test specific for shear loads and the dome test, a test specific for biaxial loads. For the uniaxial tension test the force-displacement curve was obtained and the maximum values of the loads and the displacement. For the last two tests (bias test and dome test) there have been …

Shear (sheet metal)EngineeringSiliconchemistrybusiness.industryUltimate tensile strengthUniaxial tensionchemistry.chemical_elementGeneral MedicineStructural engineeringCompression testingbusinessDisplacement (fluid)Applied Mechanics and Materials
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Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties

2010

Pd/Au/SiC nanostructured Schottky diodes were fabricated embedding Au nanoparticles (NPs) at the metalsemiconductor interface of macroscopic Pd/SiC contacts. The Au NPs mean size was varied controlling the temperature and time of opportune annealing processes. The electrical characteristics of the nanostructured diodes were studied as a function of the NPs mean size. In particular, using the standard theory of thermoionic emission, we obtained the effective Schottky barrier height (SBH) and the effective ideality factor observing their dependence on the annealing time and temperature being the signature of their dependence on the mean NP size. Furthermore, plotting the effective SBH as a fu…

SiCMaterials scienceAnnealing (metallurgy)Schottky barrierNanoparticleSettore ING-INF/01 - Elettronicabarrier heightSettore FIS/03 - Fisica Della Materiachemistry.chemical_compoundSilicon carbidePdSchottky diodeAuAu nanoparticles (NPs)Electrical and Electronic EngineeringDiodeNanoscale diodebusiness.industrySchottky diodeNanoscale diode; Au; SiCComputer Science Applications1707 Computer Vision and Pattern RecognitionElectrical contactsComputer Science ApplicationschemistryNanoelectronicsOptoelectronicsbusiness
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Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

2019

Atomic layer deposition (ALD) is the method of choice to obtain uniform insulating films on graphene for device applications. Owing to the lack of out-of-plane bonds in the sp(2) lattice of graphene, nucleation of ALD layers is typically promoted by functionalization treatments or predeposition of a seed layer, which, in turn, can adversely affect graphene electrical properties. Hence, ALD of dielectrics on graphene without prefunctionalization and seed layers would be highly desirable. In this work, uniform Al2O3 films are obtained by seed-layer-free thermal ALD at 250 degrees C on highly homogeneous monolayer (1L) epitaxial graphene (EG) (amp;gt;98% 1L coverage) grown on on-axis 4H-SiC(00…

SiCMaterials sciencePhysics::Opticslaw.inventionchemistry.chemical_compoundAtomic layer depositionlawLattice (order)MonolayerPhysics::Atomic and Molecular ClustersSilicon carbidePhysics::Chemical PhysicsThin filmCondensed Matter::Quantum Gasesatomic force microscopybusiness.industryAtomic force microscopyGrapheneMechanical EngineeringCondensed Matter Physicsepitaxial graphenechemistryMechanics of Materialsatomic layer depositionOptoelectronicsatomic force microscopy; atomic layer deposition; epitaxial graphene; SiCEpitaxial graphenebusinessDen kondenserade materiens fysikAdvanced Materials Interfaces
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Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs

2019

Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data. peerReviewed

SiCcross-sectionSEBFITheavy ionpowerMOSFETneutronsäteilyfysiikkasilicon carbidetransistoritfailure in timeMREDMonte Carlosingle event burnout
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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

2020

Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes. peerReviewed

SiCpowerMOSFETdiodeSEBsäteilyfysiikkasilicon carbidepuolijohteetsingle-event burnoutionisoiva säteilydioditheavy iondegradation
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Measurements of Silicon Photomultipliers Responsivity in Continuous Wave

2012

SiPM Silicon Photomultiplier SPAD Responsivity Photodiode Continuous Wave Quantum Detector
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N-on-P and P-on-N Silicon Photomultipliers: Responsivity comparison in the continuous wave regime

2013

We report on the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers fabricated in planar technology on silicon P-type and Ntype substrate respectively. A physical explanation of the experimental results is provided.

SiPM Silicon Photomultiplier SPAD Responsivity Photodiode Continuous Wave Quantum DetectorSettore ING-INF/01 - Elettronica
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Measurements of Silicon Photomultipliers Responsivity

2012

We present some results on the optical characterization of Silicon Photomultipliers designed for medical imaging applications. In particular we will discuss our responsivity measurements performed with very low incident optical power and on a broad spectrum

SiPM Silicon Photomultiplier SPAD Responsivity Photodiode Continuous Wave Quantum DetectorSettore ING-INF/01 - Elettronica
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La colonna dell’Immacolata e la Piazza Imperiale di San Domenico a Palermo

2021

L’area presa in oggetto come campo di sperimentazione è la piazza San Domenico a Palermo, della quale abbiamo effettuato una riconfigurazione tridimensionale della forma originaria. Si tratta di un sito che ha mutato, nel corso delle epoche, il suo assetto urbano in maniera radicale. L’attuale configurazione della piazza è relativa a un intervento di sistemazione urbana dell’epoca barocca (XVIII sec.) che però è stato stravolto dal taglio della via Roma degli inizi del XX sec. L’apertura della nuova strada carrabile ha modificato profondamente la spazialità dell’involucro urbano e ne ha ribaltato i suoi significati. La storia del sito è però antecedente al progetto della piazza barocca, ed …

Sicilia AustriacaSettore ICAR/17 - DisegnoRiconfigurazione 3D
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Ceramica figurata e mercenariato in Sicilia

2006

L’articolo discute il possibile riferimento di alcune classi di ceramiche figurate rinvenute in Sicilia a gruppi mercenariali, con un approccio già tentato da J. De La Genière e qui riproposto in maniera allargata e problematica. Leggendo in maniera combinata alcune “anomalie archeologiche” derivanti da diversi contesti, si ricostruisce così una circolazione di oggetti non riconducibile a pratiche commerciali ma a movimento di individui e gruppi nell’ambito del fenomeno della “mobilità mediterranea”.

Sicilia Iconografia Mercenariato Ceramica figurataSettore L-ANT/07 - Archeologia Classica
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