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ChiLab4It system in the QA4FAQ competition
2017
ChiLab4It is the Question Answering system (QA) for Frequently Asked Questions (FAQ) developed by the Computer-Human Interaction Laboratory (ChiLab) at the University of Palermo for participating to the QA4FAQ task at EVALITA 2016 competition. The system is the versioning of the QuASIt framework developed by the same authors, which has been customized to address the particular task. This technical report describes the strategies that have been imported from QuASIt for implementing ChiLab4It, the actual system implementation, and the comparative evaluations with the results of the other participant tools, as provided by the organizers of the task. ChiLab4It was the only system whose score re…
Numerical Simulation of Thermal Effects in Coupled Optoelectronic Device-circuit Systems
2008
The control of thermal effects becomes more and more important in modern semiconductor circuits like in the simplified CMOS transceiver representation described by U. Feldmann in the above article Numerical simulation of multiscale models for radio frequency circuits in the time domain. The standard approach for modeling integrated circuits is to replace the semiconductor devices by equivalent circuits consisting of basic elements and resulting in so-called compact models. Parasitic thermal effects, however, require a very large number of basic elements and a careful adjustment of the resulting large number of parameters in order to achieve the needed accuracy.
Breast Ultra-Sound image segmentation: an optimization approach based on super-pixels and high-level descriptors
2015
International audience; Breast cancer is the second most common cancer and the leading cause of cancer death among women. Medical imaging has become an indispensable tool for its diagnosis and follow up. During the last decade, the medical community has promoted to incorporate Ultra-Sound (US) screening as part of the standard routine. The main reason for using US imaging is its capability to differentiate benign from malignant masses, when compared to other imaging techniques. The increasing usage of US imaging encourages the development of Computer Aided Diagnosis (CAD) systems applied to Breast Ultra-Sound (BUS) images. However accurate delineations of the lesions and structures of the b…
An optimization approach to segment breast lesions in ultra-sound images using clinically validated visual cues
2015
International audience; As long as breast cancer remains the leading cause of cancer deaths among female population world wide, developing tools to assist radiologists during the diagnosis process is necessary. However, most of the technologies developed in the imaging laboratories are rarely integrated in this assessing process, as they are based on information cues differing from those used by clinicians. In order to grant Computer Aided Diagnosis (CAD) systems with these information cues when performing non-aided diagnosis, better segmentation strategies are needed to automatically produce accurate delineations of the breast structures. This paper proposes a highly modular and flexible f…
Structural relaxation of E_gamma centers in amorphous silica
2002
We report experimental evidence of the existence of two variants of the E' gamma centers induced in silica by gamma rays at room temperature. The two variants are distinguishable by the fine features of their line shapes in paramagnetic resonance spectra. These features suggest that the two E' gamma differ for their topology. We find a thermally induced interconversion between the centers with an activation energy of about 34 meV. Hints are also found for the existence of a structural configuration of minimum energy and of a metastable state.
Optical and dielectric properties of MoO 3 nanosheets for van der Waals heterostructures
2021
Two-dimensional (2D) insulators are a key element in the design and fabrication of van der Waals heterostructures. They are vital as transparent dielectric spacers whose thickness can influence both the photonic, electronic, and optoelectronic properties of 2D devices. Simultaneously, they provide protection of the active layers in the heterostructure. For these critical roles, hexagonal Boron Nitride (hBN) is the dominant choice due to its large bandgap, atomic flatness, low defect density, and encapsulation properties. However, the broad catalogue of 2D insulators offers exciting opportunities to replace hBN in certain applications that require transparent thin layers with additional opti…
Electron spectra in double quantum wells of different shapes
2022
We suggest a method for calculating electronic spectra in ordered and disordered semiconductor structures (superlattices) forming double quantum wells (QW). In our method, we represent the solution of Schr\"odinger equation for QW potential with the help of the solution of the corresponding diffusion equation. This is because the diffusion is the mechanism, which is primarily responsible for amorphization (disordering) of the QW structure, leading to so-called interface mixing. We show that the electron spectrum in such a structure depends on the shape of the quantum well, which, in turn, corresponds to an ordered or disordered structure. Namely, in a disordered substance, QW typically has …
Systematical, experimental investigations on LiMgZ (Z= P, As, Sb) wide band gap semiconductors
2011
This work reports on the experimental investigation of the wide band gap compounds LiMgZ (Z = P, As, Sb), which are promising candidates for opto-electronics and anode materials for Lithium batteries. The compounds crystallize in the cubic (C1_b) MgAgAs structure (space group F-43m). The polycrystalline samples were synthesized by solid state reaction methods. X-ray and neutron diffraction measurements show a homogeneous, single-phased samples. The electronic properties were studied using the direct current (DC) method. Additionally UV-VIS diffuse reflectance spectra were recorded in order to investigate the band gap nature. The measurements show that all compounds exhibit semiconducting be…
Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure
2016
The thermoelectric properties of n type semiconductor, TiNiSn is optimized by partial substitution with metallic, MnNiSb in the half Heusler structure. Herein, we study the transport properties and intrinsic phase separation in the system. The Ti1-xMnxNiSn1-xSbx alloys were prepared by arc-melting and were annealed at temperatures obtained from differential thermal analysis and differential scanning calorimetry results. The phases were characterized using powder X-ray diffraction patterns, energy dispersive X-ray spectroscopy, and differential scanning calorimetry. After annealing the majority phase was TiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn, and MnSn2…
Thermal conductivity of group-IV Semiconductors from a Kinetic-Collective Model
2014
The thermal conductivity of group-IV semiconductors (silicon, germanium, diamond and grey tin) with several isotopic compositions has been calculated from a kinetic-collective model. From this approach, significantly different to Callaway-like models in its physical interpretation, the thermal conductivity expression accounts for a transition from a kinetic (individual phonon transport) to a collective (hydrodynamic phonon transport) behaviour of the phonon field. Within the model, we confirm the theoretical proportionality between the phonon–phonon relaxation times of the group-IV semiconductors. This proportionality depends on some materials properties and it allows us to predict the ther…