Search results for "Impurity"
showing 10 items of 330 documents
Optically detected magnetic resonance investigation of a luminescent oxygen–vacancy complex in Mn-doped LiBaF3
2006
The structure of an oxygen-related luminescence centre in manganese-doped LiBaF 3 was investigated by means of photoluminescence (PL) and PL-detected electron paramagnetic resonance. At 20 K an oxygen-related complex shows two luminescence bands peaking at about 430 and 475 nm, when excited at 220 nm. These bands can be attributed to an excited triplet state (S = 1) of an oxygen-vacancy complex with the z axis of the fine structure tensor parallel to the (110) direction. This complex is believed to be next to a Mn 2+ impurity on a Ba 2+ site and can be described as an oxygen on a fluorine lattice site with a nearest fluorine vacancy along the (110) direction.
Photosensitivity of silica glass with germanium studied by photoinduced of thermally stimulated luminescence with vacuum ultraviolet radiation
2003
Photosensitivity of the germanium-doped silica was studied through kinetics of recombination of the created defects in isothermal and thermally stimulated luminescence (TSL) regimes. The main observed luminescence contains bands mainly due to Ge oxygen deficient center. The maximum of photosensitivity corresponds to the high-energy part of the 7.6 eV band. The growth of TSL intensity is almost linear for the case of excitation through monochromatic light and growth with saturation in the case of excitation with white light. The efficiency of formation of TSL peaks increases with an increase of the temperature. The result was explained as multi-step process of photochemical dissociation and …
Luminescence and Raman Detection of Molecular Cl2 and ClClO Molecules in Amorphous SiO2 Matrix
2017
The support from the Latvian Research Program project IMIS 2 (L.S., K.S.) and Latvian Science Council Grant 302/2012 (A.S.) is acknowledged. K.K. was partially supported by the Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology. H.H. was supported by the MEXT Element Strategy Initiative to form research cores.
Temperature and impurity concentration effects on upconversion luminescence in LaInO3 doped with Er3+
2016
In this paper a novel method for synthesis of LaInO3:Er3+ is reported and upconversion luminescence properties of the synthesized material at different temperatures (9–300 K) are studied. The samples were prepared by co-precipitation and subsequent heat treatment of lanthanum, indium and erbium hydroxides. It is shown that the excitation at 980 nm leads to a strong green upconversion luminescence in the material. At the concentrations above 0.1 mol. % of Er3+ the energy transfer upconversion mechanism of the luminescence becomes evident. Further increase of Er3+ content in the material leads to higher red-to-green upconversion luminescence intensity ratio. The mechanisms responsible for the…
Recombination processes in unintentionally doped GaTe single crystals
2002
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…
Photoluminescence in AlN: macro‐size and nano‐powder
2007
Photoluminescence (PL) properties in AlN are studied when size of polycrystalline grains is reduced from macro-size (AlN ceramics and macro-size powder) to nano-size (nano-powder). It was found that in all these materials within the UV- blue spectral region two PL bands are observed at ∼400 nm (caused by the oxygen-related defects) and at 480 nm (with unknown defect structure) but the ratio of their intensities depends on the grain size. Reduction of AlN grain size results in decrease of the 400 nm band and increase of the 480 nm band. It allows the following conclusions: i) reduction of AlN grain size results in decrease of oxygen (the native impurity of AlN) content in the crystalline lat…
Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures.
2017
InAs nanowires grown by vapor–liquid–solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ~20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor–solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homost…
Excitation and photoluminescence spectra of single- and non-single-phased phosphors based on LaInO3 doped with Dy3+, Ho3+ activators and Sb3+ probabl…
2017
Abstract Single-phased La 0.95 Ln 0.05 InO 3 ( Ln – Dy, Ho), La 0.90 Dy 0.05 Ho 0.05 InO 3 , LaInO 3 ceramic samples as well as the La 0.95 Ln 0.05 In 0.98 Sb 0.02 O 3 ( Ln – Dy, Ho), La 0.90 Dy 0.05 Ho 0.05 In 0.98 Sb 0.02 O 3 , LaIn 0.98 Sb 0.02 O 3 samples with additional impurity LaSbO 3 phase were prepared by solid-state reactions method. Their excitation and photoluminescence (PL) spectra were measured at room temperature. It was established that PL bands intensity of spectra obtained for samples of nominal composition La 0.95 Dy 0.05 In 0.98 Sb 0.02 O 3 , La 0.95 Ho 0.05 In 0.98 Sb 0.02 O 3 , La 0.90 Dy 0.05 Ho 0.05 In 0.98 Sb 0.02 O 3 is much higher than that of single-phase La 0.95…
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Defect Luminescence of LiBaF3 Perovskites
2000
Blue and red luminescence of undoped LiBaF3 crystals was studied. A broad, isotropic photoluminescence band centered at 410 nm can be excited by 210 nm — 275 nm light in as grown crystals. After X-irradiation at RT a new narrower, anisotropic luminescence band appears at 425 mn which has an additional excitation band at 290 nm. The X-irradiation also creates the F- type centres and anisotropic centres with an absorption band at 630 nm and a luminescence band at 700 nm. No F- centre luminescence is observed. All the other centres mentioned act as radiative recombination centers as well. It is speculated that the origin of the blue luminescence is due to oxygen defects and that the red lumine…