Search results for "Kerr"
showing 10 items of 494 documents
Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
2016
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the…
Cellulose-inorganic hybrids of strongly reduced thermal conductivity
2022
Abstract The employment of atomic layer deposition and spin coating techniques for preparing inorganic-organic hybrid multilayer structures of alternating ZnO-CNC layers was explored in this study. Helium ion microscopy and X-ray reflectivity showed the superlattice formation for the nanolaminate structures and atomic force microscopy established the efficient control of the CNCs surface coverage on the Al-doped ΖnO by manipulating the concentration of the spin coating solution. Thickness characterization of the hybrid structures was performed via both ellipsometry and X-ray reflectivity and the thermal conductivity was examined by time domain thermoreflectance technique. It appears that ev…
Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides
2018
Producción Científica
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties
2017
Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300 C), film thickness (20-300 nm), bilayer thickness (0.1-100 nm),…
Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
2019
Abstract Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Fight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s−1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s−1). The better SRV with AlOxNy film is due …
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
2012
The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…
Autobiographical reading
2010
In my book, I have attempted the elaboration of a system for rereading 20th-century Hungarian autobiographies, by way of putting the emphasis on theoretical considerations. (From the “Death of the Author” to the Resurrection of the Author, Stereotypes in Autobiographical Reading) The major analytical aspects of the Autobiographical Reading focuses on the language based means of the representation of the Self. (Language and Subject, Staging the Self, Inter-Replacing Play of Image and Representation, Relationship between the Narrating and the Narrated Autobiographical Self, Memory and Identity) The choice of this subject matter is justified first of all by the fact that the conditions for the…
Moninkertainen mies : maskuliinisuudet ja kerronta Petri Tammisen teoksissa Elämiä, Miehen ikävä, Väärä asenne ja Piiloutujan maa
2005
Observation d'effets Kerr d'ordres élevés (HOKE) dans les gaz
2011
Talk given by O. Faucher; National audience
Elaboration of multimaterial optical fibers with electro-optical functionalities
2022
The emergence of multimaterials optical fibers is of tremendous technological interest in photonics to combine the remarkable properties of glasses with those of other materials such as metals or polymers in order to form a fully integrated fiber optical system with multiple functionalities. Among these hybrid fibers, the development of fibers combining both optical signal and simultaneous electrical transport function could bring alternative interesting solution in many fields such as telecommunications, medicine or sensing. The drawing of architectures merging electrical and optical features in a unique elongated wave-guiding structure will enable to develop electro-optical functionalitie…