Search results for "LEDs"

showing 10 items of 32 documents

Tunable Eu2+ emission in KxNa1 − xLuS2 phosphors for white LED application

2016

Set of Eu2+-doped KxNa1 − xLuS2 phosphors (x = 0–1) in the form of transparent crystalline hexagonal platelets was successfully synthesized by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, X-ray fluorescence, time-resolved luminescence spectroscopy and electron paramagnetic resonance. Special attention was given to photoluminescence emission spectra under the 395 nm and 455 nm excitation aiming to obtain white emission with tunable color temperature. EPR method was employed to understand the Eu2+ incorporation and distribution in the KxNa1 − xLuS2 hosts. CIE xy-coordinates were calculated to compare effects o…

Materials sciencePhotoluminescenceWhite LEDsAnalytical chemistryPhosphor02 engineering and technologyColor temperature01 natural scienceslaw.inventionlaw0103 physical scienceslcsh:TA401-492General Materials ScienceEmission spectrumElectron paramagnetic resonanceSpectroscopyPhotoluminescence010302 applied physicsMechanical Engineering021001 nanoscience & nanotechnologyCircadian light sourcesSolid-state lightingMechanics of MaterialsEu2+ emissionlcsh:Materials of engineering and construction. Mechanics of materialsEPR0210 nano-technologyLuminescenceMaterials & Design
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First InGaN/GaN thin Film LED using SiCOI engineered substrate

2006

InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…

Materials scienceSiliconbusiness.industrychemistry.chemical_elementChemical vapor depositionGallium nitrideCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaLight emitting diodeslaw.inventionchemistrylawOptoelectronicsQuantum efficiencyInGaN/GaN LEDs SiCOI technologyMetalorganic vapour phase epitaxyThin filmbusinessSilicon oxideLight-emitting diodeMetallic bondingefficiency LEE
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Hybrid Inorganic‐Organic White Light Emitting Diodes

2020

This chapter reviews the state of the art of materials, technologies, characterizations, process and challenges concerning hybrid white light‐emitting diodes (LEDs). Here, for a “hybrid LED” we mean a device based on a layer of organic phosphors (or a mix of inorganic and organic ones) pumped by a high‐energy inorganic LED. Light is emitted by a frequency down‐conversion (sometimes simply named color‐conversion) process. Benefits and weak spots of this technology are investigated with a special attention for the materials involved into the process of frequency down‐conversion, in order to envisage the future impact of the hybrid lighting technology among the well‐established inorganic ones.

Materials sciencebusiness.industryWhite lightOptoelectronicsMetal-organic frameworkInorganic organicbusinessHybrid Inorganic-Organic White Light Emitting Diodes (HWLEDs) Frequency-down conversion Luminescent polymers and molecular dyes Biomaterials and biomolecules Metal-Organic Frameworks Carbon dots Color tuning and rendering of HWLEDs Stability of HWLEDsSettore ING-INF/01 - ElettronicaDiode
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InAlN underlayer for near ultraviolet InGaN based light emitting diodes

2019

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhibits a bandgap of 4.6 eV. This allows alleviating absorption issues in NUV LEDs. We demonstrate that the internal quantum efficiency of 405 nm single InGaN/GaN quantum well LEDs with InAlN UL is similar to 70% compared to less than 10% for LEDs without UL. Excellent I-V characteristics are achieved thanks to polarization charge screening with high doping level at the InAlN/GaN interface. (C) 2019 The Japan Society of Applied Physics

Materials sciencebusiness.industrylawGeneral EngineeringGeneral Physics and AstronomyOptoelectronicsNear ultravioletbusinessSettore ING-INF/01 - ElettronicaLight-emitting diodelaw.inventionNitride semiconductors Nitride-based LEDs Underlayer effects on nitride-based LEDs
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Ce:YAG nanoparticles embedded in a PMMA matrix: preparation and characterization

2010

A Ce:YAG-poly(methyl methacrylate) composite was prepared using in situ polymerization by embedding the Ce:YAG nanopowder in a blend of methyl methacrylate (MMA) and 2-methacrylic acid (MAA) monomers and activating the photopolymerization using a radical initiator. The obtained nanocomposite was yellow and transparent. Its characterization was performed using transmission electron microscopy, small angle X-ray scattering, (13)C cross-polarization magic-angle spinning nuclear magnetic resonance, and photoluminescence spectroscopy. Results showed that Ce:YAG nanoparticles are well dispersed in the polymeric matrix whose structure is organized in a lamellar shape. The luminescence properties o…

NanocompositeMaterials scienceNanoparticleSurfaces and InterfacesCe:YAG nanopowders PMMA transparent polymeric composite white LEDs.Condensed Matter Physicschemistry.chemical_compoundPhotopolymerchemistryPolymerizationMethacrylic acidChemical engineeringPolymer chemistryElectrochemistryGeneral Materials ScienceMethyl methacrylateIn situ polymerizationLuminescenceSpectroscopy
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A simple method for measuring OLEDs efficiency

2015

External quantum efficiency (EQE) of organic light emitting diodes (OLEDs) is among the most important parameters for devices assessment and for comparing OLEDs performance. The EQE is the ratio of the total number of photons emitted by the OLED in all directions to the number of electrons injected.

Organic Electronics Organic LEDs (OLEDs) efficiency measurementSettore ING-INF/01 - Elettronica
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DC lifetime of encapsulated organic light emitting diodes

2016

Organic light emitting diodes (OLEDs) are ideal sources for chemical and biological optical sensors, due to their simplicity, low cost (disposable applications) and possibility to be integrated on chip and fabricated in the form of large 2D arrays (microarray fluorescence) even on flexible plastic substrates. OLEDs with lifetimes of a few hundreds of hours at initial luminance values in the range (500÷1000) cd/m 2 are suitable for the above applications, but these lifetimes can be achieved only by a proper encapsulation. Fast, simple and inexpensive encapsulation methods are highly desirable to keep the low cost profile and for this reasonwe report two different encapsulation structures and…

Organic Electronics Organic light emitting diodes (OLEDs) encapsulation lifetimeSettore ING-INF/01 - Elettronica
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A comparative study of encapsulation structures for OLEDs

2007

Encapsulation is the final and most important step in the fabrication of organic light emitting diodes (OLEDs). An OLED operated in air can have a lifetime, defined as the time it takes for the luminance to decrease to half of its initial value, up to a few hours or less [1] due to degradation mechanisms induced by water vapour and oxygen. For emerging niche applications, such as OLED fluorescence biosensors [2] for routine laboratory analysis, the OLED is operated for a short period of time and then it must be disposed of. In this case OLEDs lifetimes of the order of a few hundreds of hours at initial luminance values in the range (500 1000) cd/m2 can be considered acceptable. To keep th…

Organic Light Emitting Diodes (OLEDs) encapsulation methods sealant materialsSettore ING-INF/01 - Elettronica
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Efficiency enhancement of organic light emitting diodes by NaOH surface treatment of the ITO anode

2009

Abstract Organic light emitting diodes (OLEDs) based on tris-(8-idroxyquinoline)aluminum (Alq 3 ) with enhanced efficiency are reported here. This is obtained by improving the charge carrier balance, through a preliminary NaOH surface treatment of the indium tin oxide (ITO) anode, in order to decrease its work function and, consequently, reduce the hole injection. The obtained devices exhibit a 1.36% external quantum efficiency and a 1.2 lm/W power efficiency at a current density of 60 mA/cm 2 . These values are more than double as compared with those of identical reference devices fabricated without the preliminary NaOH surface treatment.

Organic electronicsOrganic light emitting diodes (OLEDs)Materials sciencebusiness.industryEfficiencyCondensed Matter PhysicsTin oxideSettore ING-INF/01 - ElettronicaElectronic Optical and Magnetic MaterialsIndium tin oxideAnodeOpticsDevice fabrication techniqueITO surface treatmentWork function modificationMaterials ChemistryOLEDOptoelectronicsWork functionQuantum efficiencyElectrical and Electronic EngineeringbusinessCurrent density
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LED organici con emissione nel blu

2007

We report the development of blue organic light emitting diodes (OLEDs) based on molecular materials. Electrical characteristics and quantum efficiency of single layer devices and triple layer devices comprising further a hole blocking layer and an electron injection layer are compared and prospects for applications to passive matrix displays and fluorescence integrated biosensors are also discussed.

Organic light emitting diodes (OLEDs) Blue emission organic semiconductorsSettore ING-INF/01 - Elettronica
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