Search results for "MAGNETORESISTANCE"

Sub-mA current measurement by means of GMR sensors and state of the art lock-in amplifiers

2015

Electric current measurement at the range of μA in integrated circuit has been traditionally carried out by micro-electronically engineered systems, such as current mirrors or charging capacitors. However, off-line, i.e., non-intrusive methods provide advantages related to size and power consumption. In this sense, giant magnetoresistance (GMR) magnetic sensors are optimal due to their sensitivity and CMOS compatibility. In this work, we make use of specifically designed CMOS GMR-based current sensors in combination with a custom electronic interface based on a low-voltage low-power lock-in amplifier, demonstrating the capability of this combination for current measurement in the range of μ…

Magnetic Tunnel Junction (MTJ) Sensors for Integrated Circuits (IC) Electric Current Measurement

2013

We report on MgO Magnetic Tunnel Junction (MTJ) devices focusing on their potential application in the measurement of electrical current at the integrated circuit level. Single devices and full bridges have been specifically developed for this purpose. A sort of different designs regarding their geometry arrangement as well as the number of constitutive elements have been tested. Experimental characterization has been performed and results including impedance and sensitivity measurements are given.

Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing

2014

This paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 ?m CMOS ASIC has been specifically developed for this purpose. Then, a low temperature post-process, fully compatible with the CMOS technology, has been applied for depositing Giant Magnetoresistive (GMR) sensors. Preliminary experimental results for obtaining the sensitivity of the devices are presented. The detection limit is estimated to be about 5 ?A.

Creating stable Floquet–Weyl semimetals by laser-driving of 3D Dirac materials

2017

Nature Communications 8, 13940 (2017). doi:10.1038/ncomms13940

Giant Magnetoresistance in Rare Earth Compounds

2008

Interface-Assisted Sign Inversion of Magnetoresistance in Spin Valves Based on Novel Lanthanide Quinoline Molecules

2018

Molecules are proposed to be an efficient medium to host spin-polarized carriers, due to their weak spin relaxation mechanisms. While relatively long spin lifetimes are measured in molecular devices, the most promising route toward device functionalization is to use the chemical versatility of molecules to achieve a deterministic control and manipulation of the electron spin. Here, by combining magnetotransport experiments with element-specific X-ray absorption spectroscopy, this study shows the ability of molecules to modify spin-dependent properties at the interface level via metal–molecule hybridization pathways. In particular, it is described how the formation of hybrid states determine…

Transport and magnetic properties of La1−xCaxMnO3-films (0.1<x<0.9)

2000

Abstract By laser ablation we prepared thin films of the colossal magnetoresistive compound La1−xCaxMnO3 with doping levels 0.1 10 13 Ω have been measured with an electrometer setup. While the transport data indicate polaronic transport for the metallic samples above the Curie temperature the low-doped ferromagnetic insulating samples show a variable range hopping like transport at low-temperature.

Electric field modification of magnetotransport in Ni thin films on (011) PMN-PT piezosubstrates

2015

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 106, 062404 (2015) and may be found at https://doi.org/10.1063/1.4907775 This study reports the magnetotransport and magnetic properties of 20 nm-thick polycrystalline Ni films deposited by magnetron sputtering on unpoled piezoelectric (011) [PbMg1/3Nb2/3O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The longitudinal magnetoresistance (MR) of the Ni films on (011) PMN-PT, measured at room temperature in the magnetic field range of −0.3 T < μ0H < 0.3 T, is found to depend on the crystallographic direction and polarization state …

Crystal Structure and Transport Properties of Sr&lt;sub&gt;2&lt;/sub&gt;FeMoO&lt;sub&gt;6&lt;/sub&gt; Thin Films

2001

Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices

2017

The appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single-molecule electrical contact at room temperature. The single-molecule conductance of a Au/molecule/Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode. The requirements of the molecule include not just the presence of unpaired electrons: the electronic configuration of the metal center has to provide occupied or empty orbitals that strongly interact with the junction metal electrodes and that are close in energy to their F…