Search results for "MAGNETORESISTANCE"
showing 10 items of 173 documents
Pulsed laser deposition of Sr2FeMoO6 thin films
2005
Abstract The effect of various deposition conditions and after-growth protocols on the magnetic and transport properties of Sr 2 FeMoO 6 films has been explored. It is found that the saturation magnetization and the magnetoresistance (MR) are dominated by the degree of cationic order, and the strain effects are clearly evidenced in a lower T C . The after-growth annealing of the films and the deposition of a buffer layer has been found to relax the film strains. This translates into a clear increase of the measured low-field magnetoresistance ratios.
Synthesis and characterization of highly ordered cobalt-magnetite nanocable arrays.
2006
Magnetically tunable, high-density arrays of coaxial nanocables within anodic aluminum oxide (AAO) membranes have been synthesized. The nanocables consist of magnetite nanowires surrounded by cobalt nanotube sheaths and cobalt nanowires surrounded by magnetite nanotube sheaths. These materials are a combination of separate hard (Co) and soft (Fe3O4) magnetic materials in a single nanocable structure. The combination of two or more magnetic materials in such a radial structure is seen as a very powerful tool for the future fabrication of magnetoresistive, spin-valve and ultrafast spin-injection devices with nonplanar geometries. The nanocable arrays were prepared using a supercritical-fluid …
Direct method for calculating temperature-dependent transport properties
2015
We show how temperature-induced disorder can be combined in a direct way with first-principles scattering theory to study diffusive transport in real materials. Excellent (good) agreement with experiment is found for the resistivity of Cu, Pd, Pt (and Fe) when lattice (and spin) disorder are calculated from first principles. For Fe, the agreement with experiment is limited by how well the magnetization (of itinerant ferromagnets) can be calculated as a function of temperature. By introducing a simple Debye-like model of spin disorder parameterized to reproduce the experimental magnetization, the temperature dependence of the average resistivity, the anisotropic magnetoresistance and the spi…
Graphene enhances the magnetoresistance of FeNi3nanoparticles in hierarchical FeNi3–graphene nanocomposites
2016
An increase in the giant magnetoresistance of FeNi3 nanoparticles of 20 times has been observed in FeNi3–graphene nanocomposites synthesized using NiFe-layered double hydroxide hybrids as precursors. The magnetic, transport and magneto-transport properties of these nanocomposites are studied and compared with those of the pure FeNi3 nanoparticles. The hierarchical structure and hybrid composition of these magnetic nanocomposites lead to the observation of two unusual magneto-transport properties, namely (i) an enhancement in the low-field magnetoresistance effects, and (ii) a crossover from negative to positive MR upon cooling down the sample.
Transport and magnetic properties of La1−xCaxMnO3-films (0.1<x<0.9)
2000
Abstract By laser ablation we prepared thin films of the colossal magnetoresistive compound La1−xCaxMnO3 with doping levels 0.1 10 13 Ω have been measured with an electrometer setup. While the transport data indicate polaronic transport for the metallic samples above the Curie temperature the low-doped ferromagnetic insulating samples show a variable range hopping like transport at low-temperature.
Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology
2014
In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level si…
Giant negative magnetoresistance in GdI2
2000
Abstract GdI 2 is a layered d 1 compound which is isostructural with and nominally isoelectronic to the superconductors 2H–TaS 2 and 2H–NbSe 2 . GdI 2 orders ferromagnetically at 276(2) K and displays large negative magnetoresistance ∼70% at 7 T close to room temperature. At 10 K the saturation magnetization is 7.33(5) μ B in good agreement with the value predicted from spin polarized band structure calculations.
Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe
2019
Antiferromagnets possess a number of intriguing and promising properties for electronic devices, which include a vanishing net magnetic moment and thus insensitivity to large magnetic fields and characteristic terahertz frequency dynamics. However, probing the antiferromagnetic ordering is challenging without synchrotron-based facilities. Here, we determine the material parameters of the insulating iron oxide hematite, α-Fe2O3, using the surface sensitive spin-Hall magnetoresistance (SMR). Combined with a simple analytical model, we extract the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya field over a wide range of temperatures and magnetic fields. Across the Morin phas…
High spin polarization in Co2CrAl–Cr superlattice
2009
The electronic structure, magnetic properties and interface effects in Co2CrAl?Cr superstructures have been investigated by the use of first principle calculations. The results show that at the interface, a large magnetic moment and a high spin polarization can be induced by a strong ferromagnetic exchange interaction at the Cr?Co interface. However, at the CrAl?Cr interface, both the magnetic moment and the spin polarization of the Cr atoms are decreased due to a Cr?Cr antiferromagnetic interaction. It can also be found that the interface effect is only a short range effect. So, high spin polarization in Co2CrAl?Cr superlattice can be obtained. Based on this theoretical analysis, a large g…
Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors
2015
Abstract The paper shows an experimental study to know the behaviour of tunnel magnetoresistive effect-based current sensors configured in a Wheatstone bridge in response to irradiation. In particular the sensitivity, hysteresis, output offset voltage and input resistance are discussed when the sensors are submitted to a total irradiation dose of 43 krad with 36 krad/h dose rate. The same electrical parameters were studied subsequently once the irradiated sensors were submitted to an 80 °C annealing process. The studied TMR sensors are applied in a switched-mode power converter for space application.