6533b834fe1ef96bd129cb51
RESEARCH PRODUCT
Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors
Susana CardosoSergio Iván Ravelo AriasPaulo P. FreitasDiego Ramírez MuñozRicardo Ferreirasubject
Wheatstone bridgeMaterials scienceInput offset voltageMagnetoresistanceAnnealing (metallurgy)business.industryMetals and AlloysElectrical engineeringCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionTunnel magnetoresistancelawAbsorbed doseOptoelectronicsCurrent sensorIrradiationElectrical and Electronic EngineeringbusinessInstrumentationdescription
Abstract The paper shows an experimental study to know the behaviour of tunnel magnetoresistive effect-based current sensors configured in a Wheatstone bridge in response to irradiation. In particular the sensitivity, hysteresis, output offset voltage and input resistance are discussed when the sensors are submitted to a total irradiation dose of 43 krad with 36 krad/h dose rate. The same electrical parameters were studied subsequently once the irradiated sensors were submitted to an 80 °C annealing process. The studied TMR sensors are applied in a switched-mode power converter for space application.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2015-04-01 | Sensors and Actuators A: Physical |