0000000000084303
AUTHOR
Susana Cardoso
showing 24 related works from this author
Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor
2017
In the present work, the design and microfabrication of a tunneling magnetoresistance (TMR) electrical current sensor is presented. After its physical and electrical characterization, a wattmeter is developed to determine the active power delivered to a load from the AC 50/60 Hz mains line. Experimental results are shown up to 1000 W of power load. A relative uncertainty of less than 1.5% with resistive load and less than 1% with capacitive load was obtained. The described application is an example of how TMR sensing technology can play a relevant role in the management and control of electrical energy.
A Non-Invasive Thermal Drift Compensation Technique Applied to a Spin-Valve Magnetoresistive Current Sensor
2011
A compensation method for the sensitivity drift of a magnetoresistive (MR) Wheatstone bridge current sensor is proposed. The technique was carried out by placing a ruthenium temperature sensor and the MR sensor to be compensated inside a generalized impedance converter circuit (GIC). No internal modification of the sensor bridge arms is required so that the circuit is capable of compensating practical industrial sensors. The method is based on the temperature modulation of the current supplied to the bridge, which improves previous solutions based on constant current compensation. Experimental results are shown using a microfabricated spin-valve MR current sensor. The temperature compensati…
Address Event Representation (AER) approach to resistive sensor arrays
2020
Address event representation (AER) has become an excellent strategy when approaching traditional frame based applications, mainly vision sensors. In this paper, and Within this scope, the potential of the AER paradigm is demonstrated when considering resistive (non-vision) sensor arrays. For showing quantitative evidences, MOS AMS 0.35 μm versions of some of the circuit cells typically used in AER systems, such as Winner-Take-All (WTA) circuits, have been implemented and analyzed. In these unit-cells, basic resistance-controlled sources are considered as per sensing devices. Preliminary simulation results demonstrate that this approach is valid for a wide range of resistive sensors.
Magnetic Tunnel Junction (MTJ) Sensors for Integrated Circuits (IC) Electric Current Measurement
2013
We report on MgO Magnetic Tunnel Junction (MTJ) devices focusing on their potential application in the measurement of electrical current at the integrated circuit level. Single devices and full bridges have been specifically developed for this purpose. A sort of different designs regarding their geometry arrangement as well as the number of constitutive elements have been tested. Experimental characterization has been performed and results including impedance and sensitivity measurements are given.
A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation
2011
An advanced model for quasi-linear spin-valve (SV) structures is presented for circuit simulation purposes. The model takes into account electrical and thermal effects in a coupled way in order to allow a coherent representation of the sensor physics for design purposes of electronics applications based on these sensor devices. The model was implemented in Verilog-A and used in a commercial circuit simulator. For testing the model, different SV structures have been specifically fabricated and measured. The characterization included DC measurements as well as steady-state and transient thermal analysis. From the experimental data, the parameters of the model have been extracted. The model re…
Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level
2010
An analytical compact model for giant magnetoresistance (GMR) based current sensors has been developed. Different spin-valve based full Wheatstone bridge sensors, with the current straps integrated in the chip, have been considered. These devices have been experimentally characterized in order to extract the model parameters. In this respect, we have focused on the sensors linear operation regime. The model, which allows the individual description of the magnetoresistive elements, has been implemented in a circuit simulator by means of a behavioral description language: Verilog-A. We also propose the use of the devices in a direct power measurement application at the integrated circuit (IC)…
Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors
2013
Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function is obtain…
Integration of GMR sensors with different technologies
2016
Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the …
Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology
2014
In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level si…
Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors
2015
Abstract The paper shows an experimental study to know the behaviour of tunnel magnetoresistive effect-based current sensors configured in a Wheatstone bridge in response to irradiation. In particular the sensitivity, hysteresis, output offset voltage and input resistance are discussed when the sensors are submitted to a total irradiation dose of 43 krad with 36 krad/h dose rate. The same electrical parameters were studied subsequently once the irradiated sensors were submitted to an 80 °C annealing process. The studied TMR sensors are applied in a switched-mode power converter for space application.
Ru-Based Thin Film Temperature Sensor for Space Environments: Microfabrication and Characterization under Total Ionizing Dose
2016
The paper shows the microfabrication processes of a Ruthenium-based resistance temperature detector and its behavior in response to irradiation at ambient temperature. The radiation test was done in a public hospital facility and followed the procedures based on the ESA specification ESCC 22900. The instrumentation system used for the test is detailed in the work describing the sensors resistance evolution before, during, and after the exposure. A total irradiation dose of 43 krad with 36 krad/h dose rate was applied and a subsequent characterization was performed once the Ru sensors were submitted to an 80°C annealing process during a period of 168 h. The experimental measurements have sho…
Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing
2014
This paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 ?m CMOS ASIC has been specifically developed for this purpose. Then, a low temperature post-process, fully compatible with the CMOS technology, has been applied for depositing Giant Magnetoresistive (GMR) sensors. Preliminary experimental results for obtaining the sensitivity of the devices are presented. The detection limit is estimated to be about 5 ?A.
Quasi-static magnetoresistive sensor modeling for current-time conversion circuit applications
2011
In this paper we report a current-to-time converter (CTC) suitable for current sensor monitoring in low power applications. Based on a discrete resistence-to-frequency converter and a Giant MagnetoResistance (GMR) current sensor. Simulations have been done using a quasi-static electrical Verilog-A model for the GMR current sensor. A reduced set of parameters has been extracted to characterize the GMR sensor's behavior. The application has been analyzed making use of different sensors, whose device parameters were previously extracted. Finally, the accuracy of the models has been tested by comparing with experimental transient measurements.
Advanced Giant Magnetoresistance (GMR) sensors for Selective-Change Driven (SCD) circuits
2021
Nowadays, bio-inspiration is driving novel sensors designs, beyond vision sensors. By taking advantage of their compatibility with standard CMOS technologies, the integration of giant magneto-resistance (GMR) based magnetic sensors within such event-driven approaches is proposed. With this aim, several topologies of such GMR sensors have been designed, fabricated and characterized. In addition, integrated circuit interfaces of a standard CMOS technology are also proposed. Their suitability for this approach is then demonstrated by means of Cadence IC simulations.
Electrical Characterization of a Magnetic Tunnel Junction Current Sensor for Industrial Applications
2012
The objective of the work was the design of a Wheatstone bridge current sensor using MTJ as magnetoresistive elements. Each one of the four resistances of the bridge consists on 360 MTJ single elements connected in series for improved electrical robustness. A printed circuit board (PCB) was designed with a U-shaped copper trace placed under the PCB maintaining a 1.1 mm separation distance between sensor and trace. A 160% of tunnel magnetoresistance effect in the single junction and a 120% in its corresponding series elements connection has been achieved with a sensitivity of 9.2 Ω/Oe in a 65 Oe linear range. The DC sensor sensitivity in response to an external DC current sweeps of ±10, ±20,…
Monolithic integration of GMR sensors for standard CMOS-IC current sensing
2017
Abstract In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a de…
Note: A non-invasive electronic measurement technique to measure the embedded four resistive elements in a Wheatstone bridge sensor
2015
The work shows a measurement technique to obtain the correct value of the four elements in a resistive Wheatstone bridge without the need to separate the physical connections existing between them. Two electronic solutions are presented, based on a source-and-measure unit and using discrete electronic components. The proposed technique brings the possibility to know the mismatching or the tolerance between the bridge resistive elements and then to pass or reject it in terms of its related common-mode rejection. Experimental results were taken in various Wheatstone resistive bridges (discrete and magnetoresistive integrated bridges) validating the proposed measurement technique specially whe…
Quasi-digital conversion for resistive devices: application in GMR-based IC current sensors
2013
Resistive devices, including sensors, are used in a huge range of applications within different scenarios. When a complete system is considered, a quasi-digital output is often recommendable. If the conversion is operated at device level, some problems such as noise disturbs, insertion losses and so on, can be reduced. In this work, we describe a resistance-tofrequency (R-f) converter with a suggested application in low current monitoring by means of GiantMagnetoResistance (GMR) sensors. Specific devices have been designed and microfabricated. The system has been tested by means of discrete components with a PCB. The complete microsystem monolithic integration in a standard CMOS technology …
Sub-mA current measurement by means of GMR sensors and state of the art lock-in amplifiers
2015
Electric current measurement at the range of μA in integrated circuit has been traditionally carried out by micro-electronically engineered systems, such as current mirrors or charging capacitors. However, off-line, i.e., non-intrusive methods provide advantages related to size and power consumption. In this sense, giant magnetoresistance (GMR) magnetic sensors are optimal due to their sensitivity and CMOS compatibility. In this work, we make use of specifically designed CMOS GMR-based current sensors in combination with a custom electronic interface based on a low-voltage low-power lock-in amplifier, demonstrating the capability of this combination for current measurement in the range of μ…
Electrical Modeling of Monolithically Integrated GMR Based Current Sensors
2018
We report on the electrical compact model, using Verilog-A, of a monolithically integrated giant magnetoresistance (GMR) based electrical current sensors. For this purpose, a specifically designed ASIC (AMS $0.35\mu \mathrm{m}$ technology) has been considered, onto which such sensors have been patterned and fabricated, following a two-steps procedure. This work is focused on the DC regime model extraction, giving evidences of its good performance and stating the bases for subsequent model improvements.
MgO Magnetic Tunnel Junction Electrical Current Sensor With Integrated Ru Thermal Sensor
2013
Full Wheatstone bridge electrical current sensor incorporating 114 MgO-based magnetic tunnel junction elements (3 × 30 μm2) connected in series was produced for improved electrical robustness. To that end, magnetic tunnel junctions with R × A ~7 KΩ μm2 tunneling magnetoresistance of 200%, were produced. The sensor was designed with an integrated Ru thin film resistive thermal detector (RTD) for temperature drift monitoring and compensation. In order to achieve a full bridge signal, a U-shaped copper trace was placed under a printed circuit board (PCB) specifically designed for this type of device. The resulting device exhibit sensitivities of 63.9 V/Oe/A in a 75 Oe linear range biased with …
A tunnel magnetoresistive effect wattmeters-based wireless sensors network
2017
Abstract In the present work a wireless sensors network (WSN) for smart energy metering is presented using the ZigBee protocol as the communication link. Each network node process the electrical power by means of a Wheatstone bridge sensor based on the tunnel magnetoresistive (TMR) effect working as analogue multiplier. The electrical power is acquired and processed by a digital signal processor that extracts various parameters of interest like current and voltage load, active power and power factor by means of Fourier analysis. All the obtained electrical parameters at each node are served and shown in a web page that can be easily accessed by authorized users.
Electrical ammeter based on spin-valve sensor.
2012
The present work shows an electrical ammeter for laboratory purpose based on a magnetoresistive (MR) spin-valve (SV) sensor. The proposed ammeter measures a 10 A maximum current and offers a maximum frequency response between 150 and 800 kHz depending on the electronics whole gain. These features are due to the use of a new generation MR-SV current sensor and a conditioning electronics that compensates in frequency and temperature the sensor response. With little adjustments in the electronics and changing the position of the sensor with respect to current carrying conductor, the designed instrument is able to measure higher current levels. The work shows the proposed ammeter with its diffe…
Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies
2014
Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order …