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RESEARCH PRODUCT
MgO Magnetic Tunnel Junction Electrical Current Sensor With Integrated Ru Thermal Sensor
D. RamirezPaulo P. FreitasSergio I. RaveloAntonio LopesElvira PazRicardo FerreiraSusana CardosoFrancis Leonard DeepakJaime Sanchezsubject
Resistive touchscreenMaterials scienceWheatstone bridgeMagnetoresistancebusiness.industryElectronic Optical and Magnetic Materialslaw.inventionTunnel magnetoresistancePrinted circuit boardLinear rangelawOptoelectronicsElectrical and Electronic EngineeringThin filmbusinessQuantum tunnellingdescription
Full Wheatstone bridge electrical current sensor incorporating 114 MgO-based magnetic tunnel junction elements (3 × 30 μm2) connected in series was produced for improved electrical robustness. To that end, magnetic tunnel junctions with R × A ~7 KΩ μm2 tunneling magnetoresistance of 200%, were produced. The sensor was designed with an integrated Ru thin film resistive thermal detector (RTD) for temperature drift monitoring and compensation. In order to achieve a full bridge signal, a U-shaped copper trace was placed under a printed circuit board (PCB) specifically designed for this type of device. The resulting device exhibit sensitivities of 63.9 V/Oe/A in a 75 Oe linear range biased with 1 mA current, providing a significantly advantageous alternative to AMR and GMR based bridges.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-07-01 | IEEE Transactions on Magnetics |