0000000000161515

AUTHOR

D. Ramirez

Modeling of Magnetoresistive-Based Electrical Current Sensors: A Technological Approach

The utilization of modeling tools can, in many cases, help us in the design and final prototyping of any sort of sensors. In this paper, we describe a finite-element method (FEM) model applied to a hybrid technology involving a full Wheatstone bridge spin-valve-based electrical current sensor. After validating the model against experimental results, we focus our studies on geometrical aspects of the sensor configuration, in order to detect possible deviations that may have occurred during the fabrication process. In this regard, the characteristics of the behavior of the sensor depending on lateral displacements and inclination are included. Moreover, the frequency response of the sensor is…

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Design of a virtual instrument for water quality monitoring across the Internet

Abstract This article presents the design of a new distributed and multi-platform system for water quality monitoring, enhanced with powerful Internet capabilities. The measured variables are temperature, turbidity, pH, dissolved oxygen, and electrical conductivity. The signal-conditioning block has been simplified through the use of software routines for thermal compensation, hence, reducing the cost and dimensions. The system offers a wide variety of Internet capabilities, like e-mail alarm notifications, automatic storage of measured data in a remote machine via the FTP protocol, dynamic generation of HTML reports, real time graphs, and indicators visible from a remote web browser, etc. …

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Design, fabrication, and analysis of a spin-valve based current sensor

Abstract In this work, we suggest a novel current sensor design, based on spin valve technology, with a full Wheatstone bridge configuration. The principal characteristic is that the four magnetoresistance sensing elements, fully active, are deposited and patterned at the same time. This way, differences among them should be insignificant, so improving voltage offset and drift temperature parameters. The complete IC fabrication process involves only three lithography steps, making the process cheaper and faster. In order to get a balanced bridge, the measured current must be properly driven, by means of an auxiliary PCB. Some prototypes, with different input impedances, have been fabricated…

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A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation

An advanced model for quasi-linear spin-valve (SV) structures is presented for circuit simulation purposes. The model takes into account electrical and thermal effects in a coupled way in order to allow a coherent representation of the sensor physics for design purposes of electronics applications based on these sensor devices. The model was implemented in Verilog-A and used in a commercial circuit simulator. For testing the model, different SV structures have been specifically fabricated and measured. The characterization included DC measurements as well as steady-state and transient thermal analysis. From the experimental data, the parameters of the model have been extracted. The model re…

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Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level

An analytical compact model for giant magnetoresistance (GMR) based current sensors has been developed. Different spin-valve based full Wheatstone bridge sensors, with the current straps integrated in the chip, have been considered. These devices have been experimentally characterized in order to extract the model parameters. In this respect, we have focused on the sensors linear operation regime. The model, which allows the individual description of the magnetoresistive elements, has been implemented in a circuit simulator by means of a behavioral description language: Verilog-A. We also propose the use of the devices in a direct power measurement application at the integrated circuit (IC)…

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SIC based solid state protections switches for space applications

Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …

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An electrical current smart transducer based on PSoC platform and integrated spin-valve sensor with embedded thin film Ruthenium temperature sensor

This work presents an intelligent electrical current sensor that combines a programmable system on chip (PSoC) with a microfabrication of a giant magnetoresistance sensor (GMR) and resistive temperature detector (RTD). Four spin-valve GMR elements configured in a Wheatstone bridge sense the electrical current, while a thin film RTD based on Ruthenium measures the temperature for spin-valve bridge sensitivity thermal compensation. The mixed signal PSoC allows implement in a single chip all electronic circuits needed to design a smart transducer: the spin-valve biasing, conditioning signal, analog to digital converter, digital signal processing and ports for communications. In the experimenta…

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Spin-valve current sensor for industrial applications

This work presents an industrial application of a new spin-valve current sensor based on the giant magnetoresistance effect (GMR) and provides a comparison between this sensor and the typical sensor used in these applications, the hall sensor. Experimental results derived from the application of this two sensors in a power application (a bi-directional three-phase rectifier) are shown.

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Novel constant current driver for ISFET/MEMFETs characterization

Abstract In the present work a new constant current driver for ISFETs and MEMFETs sensors has been developed. The proposed circuit maintains the ISFET/MEMFET operation point at constant drain–source current and voltage. The combination of some programmable current sources and an appropriate selection of a simple precision resistor allow a good ISFET/MEMFET polarization. The use of operational amplifiers with low offset and drift are required to provide the buffering function needed by the sensor.

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Electrical Characterization of a Magnetic Tunnel Junction Current Sensor for Industrial Applications

The objective of the work was the design of a Wheatstone bridge current sensor using MTJ as magnetoresistive elements. Each one of the four resistances of the bridge consists on 360 MTJ single elements connected in series for improved electrical robustness. A printed circuit board (PCB) was designed with a U-shaped copper trace placed under the PCB maintaining a 1.1 mm separation distance between sensor and trace. A 160% of tunnel magnetoresistance effect in the single junction and a 120% in its corresponding series elements connection has been achieved with a sensitivity of 9.2 Ω/Oe in a 65 Oe linear range. The DC sensor sensitivity in response to an external DC current sweeps of ±10, ±20,…

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Novel voltage-controlled conditioning circuit applied to the ISFETs temporary drift and thermal dependency

This paper describes a novel conditioning circuit applied to ion-sensitive field-effect transistors/membrane-ion-sensitive field-effect transistors (ISFETs/MEMFETs) sensors. The novel conditioning circuit allows the sensor polarization with the needed either voltage or current required in each application, thanks to two completely independent voltage-controlled blocks (current and voltage blocks). The control of the voltage block is the most critical point in our design because the voltage block maintains the sensor feedback stable, avoiding the thermal and temporary drifts of the sensor feedback.

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25-kW/50-kHz generator for induction heating

The authors present the features, technology, and construction of a transistorized generator for induction heating operating over the 4-50 kHz frequency range. This type of 25 kW output-power generator allows replacement of the electronic tube generators for most of their applications. The advantages of this new generator are more energy efficiency, extended life, reduced size, separated heating station of the generator, and connection by flexible cable. In addition, the generator has incorporated a frequency automatic tracking system that allows operating without any adjustments over a wide frequency range. >

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MgO Magnetic Tunnel Junction Electrical Current Sensor With Integrated Ru Thermal Sensor

Full Wheatstone bridge electrical current sensor incorporating 114 MgO-based magnetic tunnel junction elements (3 × 30 μm2) connected in series was produced for improved electrical robustness. To that end, magnetic tunnel junctions with R × A ~7 KΩ μm2 tunneling magnetoresistance of 200%, were produced. The sensor was designed with an integrated Ru thin film resistive thermal detector (RTD) for temperature drift monitoring and compensation. In order to achieve a full bridge signal, a U-shaped copper trace was placed under a printed circuit board (PCB) specifically designed for this type of device. The resulting device exhibit sensitivities of 63.9 V/Oe/A in a 75 Oe linear range biased with …

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Sensor Network to Measure Electric Parameters

Present paper covers the design of a sensor network to measure electric parameters taking into consideration that all needed components are available in the market as commercial products. The work is oriented to the integration of these existing devices and to give extra functionalities. The final functionality and the connection among the used components are provided by the software. The present paper gives special consideration to the software structure. The described system becomes a tool to be used for energy efficiency applications

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Electrical ammeter based on spin-valve sensor.

The present work shows an electrical ammeter for laboratory purpose based on a magnetoresistive (MR) spin-valve (SV) sensor. The proposed ammeter measures a 10 A maximum current and offers a maximum frequency response between 150 and 800 kHz depending on the electronics whole gain. These features are due to the use of a new generation MR-SV current sensor and a conditioning electronics that compensates in frequency and temperature the sensor response. With little adjustments in the electronics and changing the position of the sensor with respect to current carrying conductor, the designed instrument is able to measure higher current levels. The work shows the proposed ammeter with its diffe…

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