Search results for "MOBILITY"
showing 10 items of 922 documents
Impedance of space-charge-limited currents in organic light-emitting diodes with double injection and strong recombination
2006
The impedance model for a one-carrier space-charge-limited (SCL) current has been applied to explain some experimental features of double carrier organic light-emitting diodes. We report the analytical model of impedance of bipolar drift transport in SCL regime in the limit of infinite recombination. In this limit the ac impedance function is identical to that of a single carrier device, with a transit time modified by the sum of mobilities for electrons and holes, μn+μp. The static capacitance C(ω→0) is a factor of ¾ lower than the geometric capacitance, as observed for single carrier devices, but it is shifted to higher frequencies. It follows that impedance measurements in the dual-carri…
Strongly-coupled PbS QD solids by doctor blading for IR photodetection
2016
Solution-processed QD solids are emerging as a novel concept for high-performance optoelectronic devices. In this work, doctor blading is proposed for the fabrication of strongly-coupled QD solids from a PbS nanoink for photodetection at telecom wavelengths. The key step of this procedure is the solid-state ligand exchange, which reduces the interparticle distance and increases the carrier mobility in the resulting strongly-coupled QD solid. This is accomplished by replacing the original long oleylamine molecules by shorter molecules like 3-mercaptopropionic acid, as confirmed by FTIR, TGA and XPS. Further, a detailed investigation with XPS confirms the air-stability of the QD solids and th…
Tin-related double acceptors in gallium selenide single crystals
1998
Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…
High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide
1993
A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis…
Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor
2021
Delafossite CuFeO2 is a p-type oxide semiconductor with a band gap of ∼1.5 eV, which has attracted great interests for applications in solar energy harvesting and oxide electronics. However, there are still some discrepancies in the literature regarding its fundamental electronic structure and transport properties. In this paper, we use a synergistic combination of resonant photoemission spectroscopy and X-ray absorption spectroscopy to directly study the electronic structure of well-defined CuFeO2 epitaxial thin films. Our detailed study reveals that CuFeO2 has an indirect and d-d forbidden band gap of 1.5 eV. The top of the valence band (VB) of CuFeO2 mainly consists of occupied Fe 3d sta…
Cathodoluminescence study of undoped GaN films: Experiment and calculation
2009
Abstract In this paper, we report the theoretical and experimental results of cathodoluminescence (CL) from GaN layers grown at 800 °C by metal organic vapor phase epitaxy (MOVPE) on silicon substrate. The CL spectra recorded at room temperature reveal the near band-edge emission at 3.35–3.42 eV and a broad yellow luminescence at 2.2 eV. The CL depth analysis at constant power excitation shows inhomogeneous CL distribution in depth of these emissions as the electron beam increases from 3 to 25 keV. There appears a blue shift of the CL band-edge peaks with increasing sample depth. This behavior is explained by a change of the fundamental band gap due to residual strain and the local temperat…
Influence of Compensating Defect Formation on the Doping Efficiency and Thermoelectric Properties of Cu2-ySe1–xBrx
2015
The superionic conductor Cu_(2−δ)Se has been shown to be a promising thermoelectric at higher temperatures because of very low lattice thermal conductivities, attributed to the liquid-like mobility of copper ions in the superionic phase. In this work, we present the potential of copper selenide to achieve a high figure of merit at room temperature, if the intrinsically high hole carrier concentration can be reduced. Using bromine as a dopant, we show that reducing the charge carrier concentration in Cu_(2−δ)Se is in fact possible. Furthermore, we provide profound insight into the complex defect chemistry of bromine doped Cu_(2−δ)Se via various analytical methods and investigate the conseque…
Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3under high p…
2012
This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV at 8 GPa. The quenching of the Burstein-Moss effect in degenerate samples and the shift of the free-carrier plasma frequency to lower energies reveal a quick decrease of the bulk three-dimensional (3D) electron concentration under pressure. On increasing pressure the behavior of Hall electron concentration and mobility depends on the sample thickness, consistently with a gradual transition from mainly 3D transport at ambient pressure to mainly two-dimensional (2D) transport at hi…
Thermoelectric properties of Zn-doped Ca_(3)AlSb_(3)
2012
Polycrystalline samples of Ca_(3)Al_(1)−_(x)Zn_(x)Sb_(3), with x = 0.00, 0.01, 0.02, and 0.05 were synthesized via a combined ball milling and hot pressing technique and the influence of zinc as a dopant on the thermoelectric properties was studied and compared to the previously reported transport properties of sodium-doped Ca_(3)AlSb_(3). Consistent with the transport in the sodium-doped material, substitution of aluminum with zinc leads to p-type carrier conduction that can be sufficiently explained with a single parabolic band model. It is found that, while exhibiting higher carrier mobilities, the doping effectiveness of zinc is lower than that of sodium and the optimum carrier concentr…
Solvent-mediated assembly of atom-precise gold–silver nanoclusters to semiconducting one-dimensional materials
2020
Bottom-up design of functional device components based on nanometer-sized building blocks relies on accurate control of their self-assembly behavior. Atom-precise metal nanoclusters are well-characterizable building blocks for designing tunable nanomaterials, but it has been challenging to achieve directed assembly to macroscopic functional cluster-based materials with highly anisotropic properties. Here, we discover a solvent-mediated assembly of 34-atom intermetallic gold–silver clusters protected by 20 1-ethynyladamantanes into 1D polymers with Ag–Au–Ag bonds between neighboring clusters as shown directly by the atomic structure from single-crystal X-ray diffraction analysis. Density fun…