6533b862fe1ef96bd12c6cb4
RESEARCH PRODUCT
High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide
A. ChevyJuan P. Martínez-pastorAlfredo Segurasubject
Electron mobilityInfrared SpectraAnnealing (metallurgy)Analytical chemistryGeneral Physics and Astronomychemistry.chemical_elementAnnealingchemistry.chemical_compound:FÍSICA [UNESCO]Hall effectImpurityElectrical resistivity and conductivityTin AdditionsSelenideDoped MaterialsIndium SelenidesHall EffectCondensed matter physicsTemperature DependenceDopingUNESCO::FÍSICAElectric ConductivityIndium Selenides ; Tin Additions ; Impurities ; Annealing ; Electric Conductivity ; Infrared Spectra ; Hall Effect ; Deep Energy Levels ; Temperature Dependence ; Doped MaterialsDeep Energy LevelschemistryIndiumImpuritiesdescription
A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis can be explained by the observed increase of the 3D electron concentration, whose motion across the layers is limited by stacking‐fault‐related potential barriers. The observed macroscopic resistivity is thus determined by tunneling through those barriers. Juan.Mtnez.Pastor@uv.es
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1993-09-01 | Journal of Applied Physics |