Search results for "Selenide"
showing 10 items of 100 documents
Lattice sites of diffused gold and platinum in epitaxial ZnSe layers
2000
Abstract The lattice location of diffused gold and platinum in zinc selenide (ZnSe) epitaxial layers was studied using the Rutherford backscattering (RBS) channeling technique. Thin Au and Pt films were evaporated onto ZnSe samples. The Au/ZnSe samples were annealed at 525°C and the residual Au film was removed by etching. Channeling angular scan measurements showed that about 30% of Au atoms were close to substitutional site (displaced about 0.2 A). In the case of the Pt/ZnSe samples the annealing temperatures ranged from 600°C to 800°C. The Pt minimum yields along 〈1 0 0〉 direction were close to the random value, varying from 80% to 90%. The measured Pt angular scans along 〈1 0 0〉 and 〈1 …
Synthesis, reactivity and structural studies of selenide bridged carboranyl compounds.
2006
Reaction of the lithium salt Li[1-R-1,2-closo-C(2)B(10)H(10)] with selenium under mild conditions, followed by hydrolysis gave the diselenide compound (1-Se-2-R-1,2-closo-C(2)B(10)H(10))(2) in contrast to the well-reported mercapto compounds 1-SH-2-R-1,2-closo-C(2)B(10)H(10) obtained using a similar synthetic procedure. Details for the preparation and X-ray structural characterisation of the new compounds (2-Me-1,2-closo-C(2)B(10)H(10))(2)Se, (1-Se-2-R-1,2-closo-C(2)B(10)H(10))(2) (R = Me, Ph, ) are specified. To further explore the mechanism of the dimerization reaction, the complex [Au(1-Se-2-Me-1,2-closo-C(2)B(10)H(10))(PPh(3))] was synthesized, confirming the existence of the intermedia…
A procedure to evaluate the seven parameters of the two-diode model for photovoltaic modules
2019
Abstract The paper presents an analytical procedure to calculate the seven parameters of the two-diode model of photovoltaic (PV) panels for any value of the solar irradiance and cell temperature. Six parameters (the photocurrent, the diode reverse saturation currents, the quality factor of the first diode and the series and shunt resistances), are evaluated by solving the equations related to the properties of the main points of the current-voltage (I-V) characteristics. The further information, necessary to calculate the entire set of seven truly independent parameters, is based on two conditions that have to be simultaneously satisfied: 1) the exclusion of negative values of the model pa…
An accurate one-diode model suited to represent the current-voltage characteristics of crystalline and thin-film photovoltaic modules
2020
Abstract In this paper a new one-diode model, conceived in order to be used to represent the current-voltage curves of both crystalline and thin-film photovoltaic modules, is presented. The model parameters are calculated from the information contained in the datasheets issued by manufactures by means of simple iterative procedures that do not require the assumption of simplifying hypotheses. Some innovative relations describing the dependence of the parameters from the solar irradiance and cell temperature are adopted in order to permit the model to reliably simulate the electrical behaviour of photovoltaic devices operating in real conditions. The ability of the model to calculate the cur…
Two-Dimensional Indium Selenide for Sulphur Vapour Sensing Applications
2020
Surface-to-volume ratio in two-dimensional (2D) materials highlights among their characteristics as an inherent and intrinsic advantage taking into account their strong sensitivity to surface effects. For this reason, we have proposed in this work micromechanically exfoliated 2D nanosheets of InSe as an optical vapour sensor. As a proof of concept, we used 2-mercaptoethanol as the chemical analyte in vapour phase to monitor the change of the InSe photoluminescence (PL) before and after exposure to the analyte. For short vapour exposure times (at low analyte concentration), we found a PL enhancement of InSe nanosheets attributed to the surface localization of Se defects. For long vapour expo…
A theoretical investigation on the Cd doping of Cu-depleted CuInSe<inf>2</inf> materials
2011
Because of their outstanding characteristics and affordable price, polycrystalline thin film solar cells based on CuIn 1−x Ga x Se 2 (CIGS) absorber layer have emerged to be one of the most promising materials for photovoltaic applications [1–2]. To further enhance the efficiency of these solar cells much effort is spent on the in-depth investigation of the production methods. However, the effect of structural defects and dopants upon the macroscopic properties and morphology of epitaxially grown CIGS films is not yet fully understood [3]. More importantly, it is well established that the best cells can be prepared by growing the CIGS absorber layer under Cu-poor conditions [4]. Thus, it is…
Segmented Flow-Based Multistep Synthesis of Cadmium Selenide Quantum Dots with Narrow Particle Size Distribution
2015
A continuous-flow microreactor was used to synthetize II-VI semiconductor quantum dots (CdSe). In order to improve the size distribution of the nanoparticles, the synthesis was carried out in a two-step procedure. A seed solution was obtained in a separate nucleation step, followed by a controllable growth step. Quantum dots that are synthesized with the two-step method show a much narrower size distribution in comparison to those obtained in a conventional batch synthesis.
Low temperature mobilities of 2-D electrons in indium selenide: Neutral and ionized impurity scattering
1992
Abstract Low temperature mobility of 2-D electrons in indium selenide is calculated, taking into account neutral and ionized impurity scattering. Two-dimensional electric subbands are originated due to quantum size effects, at both sides of thin ϵ-polytype layers, separated by two stacking faults from the bulk γ-InSe. Ionized impurities are in the ϵ-layer and then, spatially separated from 2-D electrons. Neutral impurities are adsorbed to stacking faults in the ϵ-γ interface. A relaxation time for dipole-like neutral impurity scattering is deduced. Calculated mobilities are compared to previous experimental results and the areal concentration of the neutral impurities is so estimated. The i…
Nanostructure Formation on ZnSe Crystal Surface by Electrochemical Etching
2021
The article describes a simple method for nanostructuring the surface of monocrystalline zinc selenide. It is shown that the traditional electrochemical etching of n-ZnSe (111) samples in a concentrated solution of nitric acid leads to the appearance of massive etching pits and small pores on the surface. The dynamics of the process and stages of crystal dissolution has been studied. It is assumed that the porous zinc selenide obtained in this way can be used in optoelectronic structures, as well as as buffer layers for growing zinc oxide.
Adsorption of Alcohols Onto Zinc Selenide (ZnSe) Crystal Surface
2014
Adsorption behaviour of ZnSe, a popular material used in the manufacture of crystals for total internal reflectance techniques was studied for the adsorption of alcohols from dichloromethane solutions using infrared spectrometry. A series of n-alcohols were used in this study. The results show that the integrated area for the hydrogen bonded OH stretchings decrease and suggests that there is a continuous adsorption of alcohol molecules onto the ZnSe crystal by breaking the hydrogen bonds between alcohol molecules in solution.