6533b85bfe1ef96bd12ba258

RESEARCH PRODUCT

Low temperature mobilities of 2-D electrons in indium selenide: Neutral and ionized impurity scattering

Alfredo SeguraJuan P. Martínez-pastorAndrés Cantarero

subject

Condensed matter physicsScatteringchemistry.chemical_elementGeneral ChemistryElectronCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsMolecular physicsIonized impurity scatteringchemistry.chemical_compoundchemistryImpurityHall effectSelenideIonizationMaterials ChemistryIndium

description

Abstract Low temperature mobility of 2-D electrons in indium selenide is calculated, taking into account neutral and ionized impurity scattering. Two-dimensional electric subbands are originated due to quantum size effects, at both sides of thin ϵ-polytype layers, separated by two stacking faults from the bulk γ-InSe. Ionized impurities are in the ϵ-layer and then, spatially separated from 2-D electrons. Neutral impurities are adsorbed to stacking faults in the ϵ-γ interface. A relaxation time for dipole-like neutral impurity scattering is deduced. Calculated mobilities are compared to previous experimental results and the areal concentration of the neutral impurities is so estimated. The increase of the Hall mobility above 10 K is attributed to the presence of a low concentration of higher mobility 3-D electrons that are excited from shallow donors in the γ-regions.

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