Search results for "MOSFET"
showing 5 items of 45 documents
Assessment of MOSFET switching losses in an LLC converter by a calorimetric method
2023
The present work aims to implement a calorimetric method to measure the power dissipated during MOSFET switching in a high efficiency LLC resonant converter. The power dissipated from switching can significantly impact the total power dissipated by the device and consequent efficiency, so correct quantification is fundamental for optimizing the devices and increasing the efficiency of the converters. In LLC converters, this type of dissipated power cannot be measured with standard methods such as measurement with oscilloscopes as some of the energy that is recovered and not dissipated. The calorimetric method requires reasonably accurate measurement of thermal resistance and the temperature…
A lossless current sensing technique for flyback converters
2009
Regardless of the feedback control, almost all converters require input or output current sense for overcurrent protection. If a current mode control is implemented, high accuracy is also required. The optimal current sensing method shows the highest accuracy and the lowest power dissipation. In this paper, a lossless and accurate current sensing technique for Flyback converters is proposed. An RC network is parallel connected with the primary MOSFET and the voltage signal across the sense capacitor accurately reproduces the magnetizing current waveform. The RC technique benefits from all the advantages of the most common current sensing techniques currently applied to Flyback converters, a…
Simulation of parasitic effects on Silicon Carbide devices for automotive electric traction
2020
Wide Band Gap (WBG) semiconductors are increasingly addressed towards Electric Vehicle (EV) applications, due to their significant advantages in terms of high-voltage and low-losses performances, suitable for high power applications. Nevertheless, the packaging in WBG devices represents a challenge for designers due to the notable impact that inductive and capacitive parasitic components can bring in high switching frequency regime in terms of noise and power losses. In this paper, a comparison between conventional Silicon (Si) and emerging Silicon-Carbide (SiC) power switching devices is presented. The effects of inductive parasitic effects and switching frequency are investigated in simul…
Dangerous Effects Induced on Power MOSFETs by Terrestrial Neutrons
2013
This paper investigates the effects that terrestrial neutrons can induce on power MOSFETs when they are biased during their normal working conditions especially in inverters for photovoltaic applications. After a brief review of power MOSFETs failure phenomena caused by neutron irradiation (with emphasis on so called “Single Event Effects” (SEE)), the results of an accelerated test performed with the Am-Be source at the University of Palermo are discussed.
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating. peerReviewed