Search results for "MRAM"

showing 2 items of 2 documents

Magnetic domain-wall racetrack memory for high density and fast data storage

2012

The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple narrow DWS per memory cell. By using read and write heads based on magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy (PMA) fast data access speed can also be achieved. Thereby the racetrack memory can be used as universal storage to address both embedded and standalone applications. In this paper, we present the device physics, integration circuit and architecture designs of a racetrack memory based on MTJs with PMA. Mixed SPICE simulations at 65 nm …

Standalone applicationsMagnetic domainComputer scienceSpiceArchitecture designsMRAM devicesMemory cellElectronic engineeringRacetrack memoryPerpendicular magnetic anisotropyMagnetic domainsMagnetoresistive random-access memoryHardware_MEMORYSTRUCTURESIntegration circuitsNanowiresbusiness.industryMagnetic devicesElectrical engineeringNon-volatile memory technologyDomain wall motionTunnel magnetoresistanceData storage equipmentComputer data storageFerromagnetic nanowireNode (circuits)Magnetic tunnel junctionbusinessRandom access storage
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Single-event effects of space and atmospheric radiation on memory components

2017

Electronic memories are ubiquitous components in electronic systems: they are used to store data, and can be found in all manner of industrial, automotive, aerospace, telecommunication and entertainment systems. Memory technology has seen a constant evolution since the first practical dynamic Random- Access Memories (dynamic RAMs) were created in the late 60's. The demand for ever-increasing performance and capacity and decrease in power consumption was met thanks to a steady miniaturization of the component features: modern memory devices include elements barely a few tens of atomic layers thick and a few hundred of atomic layers wide. The side effect of this constant miniaturization was a…

koetusCOTSkäyttömuistitSRAMMRAMsingle-event effectmemoryRAMFRAMsäteilyfysiikkaradiation effectsflashmuistitsäteilynkestävyysradiation testingkosminen säteilyhiukkassäteilyflash-muistit
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