Search results for "Magnetic semiconductor"
showing 10 items of 31 documents
Half-Heusler compounds: novel materials for energy and spintronic applications
2012
Half-Heusler compounds are an impressive class of materials with a huge potential for different applications such as future energy applications and for spintronics. The semiconducting Heusler compounds can be identified by the number of valence electrons. The band gap can be tuned between 0 and 4 eV by the electronegativity difference of the constituents. Magnetism can be introduced in these compounds by using rare-earth elements, manganese or ‘electron’ doping. Thus, there is a great interest in the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. The combination of different properties such as superconductivity and topological edge states leads to new multifunct…
The enhancement of ferromagnetism in uniaxially stressed diluted magnetic semiconductors
2003
We predict a new mechanism of enhancement of ferromagnetic phase transition temperature $T_c$ in uniaxially stressed diluted magnetic semiconductors (DMS) of p-type. Our prediction is based on comparative studies of both Heisenberg (inherent to undistorted DMS with cubic lattice) and Ising (which can be applied to strongly enough stressed DMS) models in a random field approximation permitting to take into account the spatial inhomogeneity of spin-spin interaction. Our calculations of phase diagrams show that area of parameters for existence of DMS-ferromagnetism in Ising model is much larger than that in Heisenberg model.
Heusler Compounds—A Material Class With Exceptional Properties
2011
The class of Heusler compounds, including the XYZ and the X2YZ compounds, has not only an endless number of members, but also a vast variety of properties can be found in this class of materials, ranging from semiconductors, half-metallic ferromagnets, superconductors, and topological insulators to shape memory alloys. With this review article, we would like to provide an overview of Heusler compounds, focusing on their structure, properties, and potential applications.
New Heusler Compounds and Their Properties
2013
Spintronics is a multidisciplinary field and a new research area. New materials must be found for satisfying the different types of requirement. The search for stable half-metallic ferromagnets and ferromagnetic semiconductors with Curie temperatures higher than room temperature is still a challenge for solid state scientists. A general understanding of how structures are related to properties is a necessary prerequisite for material design. Computational simulations are an important tool for a rational design of new materials. The new developments in this new field are reported from the point of view of material scientists.
Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In,Ga,Mn)As
2021
Physical review / B 103(7), 075107 (1-13) (2021). doi:10.1103/PhysRevB.103.075107
Room-temperature spin-orbit torque in NiMnSb
2015
Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneously, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electric…
Photoinduced magnetization wave in diluted magnetic semiconductors
2006
We derive an evolutional equation incorporating the processes of spin-polarization transfer from an electron to a magnetic ion subsystem of a diluted magnetic semiconductor along with spin-lattice relaxation and spatial spin diffusion. Above equation has been obtained for nonequilibrium magnetization due to exchange scattering of photoexcited charge carriers by magnetic ions. We show that the mechanism of a band gap narrowing due to exchange scattering requires relatively low optical power to reach an optical bistability for pump frequency range close to crystal band gap. In a bulk crystal, only relatively small local area with essential magnetization enhancement can absorb optical power, t…
Optical and magnetic properties of ZnCoO thin films synthesized by electrodeposition
2008
Ternary Zn1−xCoxO crystalline films with different compositions were grown by electrodeposition. The Co content in the final compound is linked to the initial Co/Zn ratio in the starting solution. X-ray diffraction reveals a wurtzite structure for the Zn1−xCoxO films. Transmittance spectra show two effects proportional to Co content, a redshift of the absorption edge and three absorption bands, which are both interpreted to be due to the Co incorporated into the ZnO lattice. The amount of deposited charge was used to get a precise control of the film thickness. Magnetic measurements point out that Co(II) ions are isolated from each other, and consequently the films are paramagnetic. Francis…
Spin polarized tunneling at room temperature in a Heusler compound-a non-oxide material with a large negative magnetoresistance effect in low magneti…
2003
Summary form only given. Materials which display large changes in resistivity in response to an applied magnetic field (magnetoresistance) are currently of great interest due to their potential for applications in magnetic sensors, magnetic random access memories, and spintronics-a new kind of electronics based on spin instead of charge. Although ferromagnetic manganites show colossal magnetoresistance (CMR) effects around their Curie temperature, the low field and nearly temperature independent magnetoresistance properties important for spintronics are found only at low temperatures. Guided by striking features in the electronic structure of several magnetic compounds, we prepared the Heus…
Doped semiconductors as half-metallic materials: Experiments and first-principles calculations ofCoTi1−xMxSb(M=Sc, V, Cr, Mn, Fe)
2008
This work reports experiments and first-principles calculations on the substitutional semiconducting $C{1}_{b}$ compound $\mathrm{Co}{\mathrm{Ti}}_{1\ensuremath{-}x}{M}_{x}\mathrm{Sb}$. Diluted magnetic semiconductors have been prepared by substituting titanium in the semiconducting compound CoTiSb by other $3d$ transition elements $M$. Self-consistent calculations of the electronic structure predict some of the materials to be half-metallic ferromagnets. The structural, electronic, electric, and magnetic properties of the pure and substituted materials have been investigated. It is found from the experiments that substitution of up to 10% Ti by Fe, Mn, Cr, and V does not affect the crystal…