Search results for "Memristor"
showing 3 items of 43 documents
Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
2022
The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.
Resistive switching in memristors based on yttria-stabilized zirconia
2021
Effect of pulse amplitude on depression and potentiation of ZrO2(Y)-based memristive synaptic device
2022
The effect of the amplitude of depressing and potentiating pulses on the synaptic plasticity (potentiation and depression) of a memristive device based on the Ta/ZrO2(Y)/Pt stack has been experimentally studied. It is shown that the amplitude of depressing and potentiating pulses affects the synaptic plasticity, namely, the value of current passing through the memristive device. The presented results demonstrate the prospects of using the ZrO2(Y)-based memristive devices as stable and low-power elements of neuromorphic systems.