6533b862fe1ef96bd12c63b3

RESEARCH PRODUCT

Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

Filatov D. O.Koryazhkina M. N.Novikov A. S.Shishmakova V. A.Shenina M. E.Antonov I. N.Gorshkov O. N.Agudov N. V.Carollo A.Valenti D.Spagnolo B.

subject

Yttria stabilized zirconiaMetastabilitySettore FIS/02 - Fisica Teorica Modelli E Metodi MatematiciGeneral MathematicsApplied MathematicsBeneficiary role of noiseGeneral Physics and AstronomyResistive switchingStatistical and Nonlinear PhysicsMemristorNoise induced stabilization

description

The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.

https://doi.org/10.1016/j.chaos.2022.111810