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Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity

2016

This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.

High spatial resolution strain measurements at the surface of duplex stainless steels

2007

International audience; The determination of local strain fields at the surface of materials is of major importance for understanding their reactivity. In the present paper, lithography is used to fabricate grid points at the microscale and to map strain gradients within grains and between grains. This method was applied to duplex stainless steels which exhibit heterogeneous strain distributions under straining conditions. The influence of various parameters (the specimen microstructure, the density of slip bands, the number of systems activated and the grid geometry) on the strain value was discussed.

Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

3D magnetic and thermal fields for in the transformer with homogenised amorphous C-core under high frequency

2017

Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry

2000

A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…

Casting technology for ODS steels – dispersion of nanoparticles in liquid metals

2017

Dispersion of particles to produce metal matrix nanocomposites (MMNC) can be achieved by means of ultrasonic vibration of the melt using ultrasound transducers. However, a direct transfer of this method to produce steel composites is not feasible because of the much higher working temperature. Therefore, an inductive technology for contactless treatment by acoustic cavitation was developed. This report describes the samples produced to assess the feasibility of the proposed method for nano-particle separation in steel. Stainless steel samples with inclusions of TiB2, TiO2, Y2O3, CeO2, Al2O3 and TiN have been created and analyzed. Additional experiments have been performed using light metals…

Annealing behaviour of aluminium-implanted InP

2000

The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…

Creation and thermal annealing of structural defects in neutron-irradiated MgAl 2 O 4 single crystals

2018

Abstract Several novel hole-type defects (a hole localized at a regular oxygen ion near a negatively charged structural defect) have been revealed in fast neutron irradiated MgAl2O4 crystals using the EPR method. The pulse annealing of the EPR signal of these centers was compared to that of radiation induced optical absorption in the same crystals. Taking into account the determined models of V1, V2 and V22 paramagnetic centers, the tentative scenario of the thermal annealing process of neutron-induced defects (hole-type and complementary electron F-type ones) is proposed. In addition, one more paramagnetic hole center consisting of an Al|Mg as-grown antisite defect near an aluminum vacancy…

A comparative study on the compatibility of liquid lead–gold eutectic and liquid lead–bismuth eutectic with T91 and SS 316LN steels

2012

Abstract Liquid lead–gold eutectic (LGE) is considered as a potential target material for high power spallation sources. In the present work, the corrosion effects of LGE on T91 and SS 316LN steels have been investigated in comparison with that of liquid lead–bismuth eutectic (LBE) under the same testing conditions. Two tests were conducted at 400 °C for 1800 h and at 450 °C for 1300 h, in which specimens of the two steels were exposed to 1 m/s flowing LGE and LBE. Surface inspections showed that the specimens underwent a mixed corrosion mode of dissolution and oxidation. The results obtained from the SS 316LN specimens are very interesting. Firstly, EDX (electron energy dispersion X-ray sp…

Thermal annealing of radiation damage produced by swift 132Xe ions in MgO single crystals

2020

Abstract The annealing kinetics of the electron-type F+ and F color centers in highly pure MgO single crystals irradiated by 0.23-GeV 132Xe ions with fluences covering three orders of magnitude (Φ = 5 × 1011 –3.3 × 1014 ions/cm2) are studied experimentally via dependence of the optical absorption on preheating temperature. The annealing data are analyzed in terms of the diffusion-controlled bimolecular reactions between F-type centers and complementary interstitial oxygen ions. The behavior of the main kinetic parameters – the migration energies and pre-exponential factors – for different irradiation fluences is discussed and compared with that for other wide-gap binary materials from previ…