Search results for "Metallurgy"
showing 10 items of 1419 documents
On the use of tin–lithium alloys as breeder material for blankets of fusion power plants
2000
Abstract Tin–lithium alloys have several attractive thermo-physical properties, in particular high thermal conductivity and heat capacity, that make them potentially interesting candidates for use in liquid metal blankets. This paper presents an evaluation of the advantages and drawbacks caused by the substitution of the currently employed alloy lead–lithium (Pb–17Li) by a suitable tin–lithium alloy: (i) for the European water-cooled Pb–17Li (WCLL) blanket concept with reduced activation ferritic–martensitic steel as the structural material; (ii) for the European self-cooled TAURO blanket with SiCf/SiC as the structural material. It was found that in none of these blankets Sn–Li alloys woul…
Lead–gold eutectic: An alternative liquid target material candidate for high power spallation neutron sources
2011
Abstract One of the main technical concerns of Megawatt-class spallation neutron sources is the removal of the heat deposited in the target station. A way to overcome it is to use targets consisting of flowing liquid metals, but the already tested materials – mercury and lead–bismuth eutectic (LBE) – are not unproblematic. We show here that another eutectic alloy containing lead and gold (LGE) could be a suitable alternative. Besides a chemical toxicity lower than mercury, this low melting-point alloy has the advantage of being solid at RT. Moreover, it combines a neutron production similar to mercury and LBE with smaller amounts of alpha-emitting nuclides, relieving safety and environmenta…
Annealing reactions in lead implanted copper
2002
Abstract The terminal solubility of Pb in Cu is extremely low and does not exceed 0.09 at.% at 875 K. Ion implantation of lead ions at 100 keV into Cu single crystals produces metastable solutions. Annealing of the samples causes redistribution of the implanted atoms to equilibrium or near-equilibrium aggregate states which may be reflected in a change in the type of impurity lattice location in the host matrix. We have studied the effect of annealing on single crystalline Cu implanted at temperatures around 375 K with Pb to a concentration of a 1–2 at.%. Rutherford backscattering/channeling analysis and transmission electron microscopy of the as-implanted samples have shown that the implan…
Formation of cobalt silicide from filter metal vacuum arc deposited films
2006
The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 deg…
Kinetics of the electronic center annealing in Al2O3 crystals
2018
Authors are greatly indebted to A. Ch. Lushchik, V. Kortov, M. Izerrouken and R.Vila for stimulating discussions. This work has been carried out within the framework of the Eurofusion Consortium and has received funding from the Euroatom research and training programme 2014–2018 under grant agreement No 633053 . The views and opinions expressed herein do not necessarily reflect those of the European Commission. The calculations were performed using facilities of the Stuttgart Supercomputer Center (project DEFTD 12939 ).
Thermal annealing of radiation defects in MgF2 single crystals induced by neutrons at low temperatures
2020
Abstract Primary radiation defects in ionic solids consist of Frenkel defects – pairs of defects - anion vacancies with trapped electrons (F-type centers) and interstitial ions. Upon temperature increase after irradiation, the electronic F-type centers are annealed due to recombination with mobile interstitials. Analysis of the recombination (annealing) kinetics allows us to obtain important information on the interstitial migration. At high radiation doses more complex dimer (F2-type) centers are observed in several charge states, which are well distinguished spectroscopically. We analysed here available experimental kinetics of the F2-type center annealing in MgF2 in a wide temperature ra…
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
Study of Fe−Ti and Fe−TiN interfaces by conversion electron Mössbauer spectroscopy
1992
Titanium and titanium nitride-iron interfaces obtained by PVD coated thin films of Ti and TiN onto argon plasma etched iron substrates at various temperatures and negative bias were studied by use of CEMS. It was found that intermixing to Ti with Fe resulted in the appearance of an amorphous FeTi1−x phase. Furthermore, a comparison of CEM spectra of samples before and after heating in UHV has shown rather strong influence of thermal treatments on Fe/Ti as well as Fe/TiN interfaces.
Multi-technique characterization of gold electroplating on silver substrates for cultural heritage applications
2017
Proceedings of the 12th European Conference on Accelerators in Applied Research and Technology (ECAART12).-- et al.
MeV–GeV ion induced dislocation loops in LiF crystals
2014
Abstract Formation of prismatic dislocation loops and evolution of dislocation structure in LiF crystals irradiated with swift 238U and 36S ions of specific energy 11 MeV/u at fluences up to 1013 ions cm−2 has been investigated using chemical etching and AFM. It has been shown that prismatic dislocations are formed in the stage of track overlapping above threshold fluences Φ ≈ 109 U cm−2 and Φ ≈ 1010 S cm−2. The diameter of dislocation loops reaches 600–1000 nm for 238U ions and 200 nm for 36S ions. The dislocations created by 238U ions are arranged in rows along the direction of ion beam, whereas 36S ions create freely distributed dislocation loops each of them being oriented along the ion…