Search results for "Molecular beam"
showing 8 items of 78 documents
Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
2006
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
Epitaxial growth of molybdenum on TiO2(110)
2003
Abstract Molybdenum was deposited on blue (i.e. non-stoichiometric) TiO2(1 1 0) surface using a very low deposition rate (less than 0.05 eqML min−1). The resulting deposit was investigated by means of X-ray photoelectron diffraction (XPD), LEED and XPS. Just after deposition, the film is mainly constituted of metallic molybdenum, contains oxygen homogeneously dispersed through the whole deposit and the broad features detected in XPD scans are interpreted as a coarse epitaxy between TiO2(1 1 0) surface and the (0 0 1) face of bcc molybdenum. The orientation relationship is: Mo(1 0 0)[0 0 1]//TiO2(1 1 0)[0 0 1]. After annealing the deposit at 673 K, XPD scans become sharper and epitaxy is ach…
Effect of kinks and concerted diffusion mechanisms on mass transport and growth on stepped metal surfaces
1997
Abstract We study the effect of kinks and concerted atomic mechanisms on diffusion processes relevant to metal-on-metal homoepitaxy on fcc metal surfaces vicinal to the fcc (100) direction. First, we carry out extensive finite-temperature molecular dynamics simulations based on the effective medium theory to search for diffusion mechanisms that dominate the mass transport perpendicular and parallel to step edges. Then, the energetics of these processes are studied by ground state calculations. Our results show that kinks play an important role for diffusion both across and along step edges. In particular, the combined effect of kinks and concerted exchange is found to be able to remove loca…
The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes.
2021
Abstract The spontaneous growth of GaN nanowires (NWs) in absence of catalyst is controlled by the Ga flux impinging both directly on the top and on the side walls and diffusing to the top. The presence of diffusion barriers on the top surface and at the frontier between the top and the sidewalls, however, causes an inhomogeneous distribution of Ga adatoms at the NW top surface resulting in a GaN accumulation in its periphery. The increased nucleation rate in the periphery promotes the spontaneous formation of superlattices in InGaN and AlGaN NWs. In the case of AlN NWs, the presence of Mg can enhance the otherwise short Al diffusion length along the sidewalls inducing the formation of AlN …
Hybrid multiple diffraction in semipolar wurtzite materials: (\bf 01\overline{1}2)-oriented ZnMgO/ZnO heterostructures as an illustration
2017
X-ray diffraction has been widely used to characterize the structural properties (strain and structural quality) of semiconductor heterostructures. This work employs hybrid multiple diffraction to analyzer-oriented Zn1−xMgxO layers grown by molecular beam epitaxy on ZnO substrates. In such a low-symmetry material system, additional features appear in symmetric reflection scans, which are described as arising from hybrid multiple diffraction. First, the Bragg conditions necessary for these high-order processes to occur are introduced and applied to explain all the observed satellite reflections, identify the planes that contribute and computea priorithe angles at which they are observed. Fur…
Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy
2021
Abstract The mechanisms of plasma-assisted molecular beam epitaxial growth of GaN on muscovite mica were investigated. Using a battery of techniques, including scanning and transmission electron microscopy, atomic force microscopy, cathodoluminescence, Raman spectroscopy and x-ray diffraction, it was possible to establish that, in spite of the lattice symmetry mismatch, GaN grows in epitaxial relationship with mica, with the [11–20] GaN direction parallel to [010] direction of mica. GaN layers could be easily detached from the substrate via the delamination of the upper layers of the mica itself, discarding the hypothesis of a van der Waals growth mode. Mixture of wurtzite (hexagonal) and z…
Material quality characterization of CdZnTe substrates for HgCdTe epitaxy
2006
Cd1−xZnxTe (CZT) substrates were studied to investigate their bulk and surface properties. Imperfections in CZT substrates affect the quality of Hg1−xCdxTe (MCT) epilayers deposited on them and play a role in limiting the performance of infrared (IR) focal plane arrays. CZT wafers were studied to investigate their bulk and surface properties. Transmission and surface x-ray diffraction techniques, utilizing both a conventional closed-tube x-ray source as well as a synchrotron radiation source, and IR transmission micro-spectroscopy, were used for bulk and surface investigation. Synchrotron radiation offers the capability to combine good spatial resolution and shorter exposure times than conv…
X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC.
2009
By means of x-ray absorption near-edge structure (XANES) several Ga(1-x)Mn(x)N (0.03x0.09) layers have been analyzed. The Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien…