Search results for "Monocrystals"
showing 4 items of 4 documents
The application of the photoacoustic transmittance oscillations for determining elastic constants in gallium and indium selenides
1996
Transmittance periodic oscillations are observed in GaSe and InSe on excitation with optical pulses. Such oscillations are explained in terms of photoacoustic generation of dilatational waves, which become resonant within the crystal. Spectral analysis of those oscillations in samples of different thickness has led to an accurate determination of the longitudinal acoustic‐wave velocity along the crystallographic axis c. Julio.Pellicer@uv.es ; Chantal.Ferrer@uv.es ; Vicente.Munoz@uv.es
Optical characterization of YCa4O(BO3)3 and Nd:YCa4O(BO3)3 crystals
2007
International audience; We report a complete optical characterization of YCa4O(BO3)3 and Nd:YCa4O(BO3)3 crystals. We studied the relative orientation between the dielectric and the crystallographic frames as a function of the wavelength and performed accurate phase-matching angles measurements for second harmonic generation, using a single crystal cut as a sphere. We also recorded polarized luminescence spectra of Nd:YCOB along the principal axes of the dielectric frame. For both crystals, we measured the gray-tracking and the thermo-optic properties as a function of temperature and wavelength using oriented slabs. Finally, we measured all their dielectric and electro-optic coefficients, as…
Transport properties of nitrogen doped p‐gallium selenide single crystals
1996
Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 Ω cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor‐single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in orde…
Positron lifetime measurements on neutron‐irradiated InP crystals
1996
Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals. navarrof@evalvx.ific.uv.es ; Jose.Ferrero@uv.es