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RESEARCH PRODUCT
Positron lifetime measurements on neutron‐irradiated InP crystals
Bernabé MaríF.j. NavarroLaura Cristina DamonteJ.l. Ferrerosubject
Materials sciencePhysics::Instrumentation and DetectorsPhysics::Medical PhysicsAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementDefect StructureMonocrystalsSpectral lineCondensed Matter::Materials Science:FÍSICA [UNESCO]Vacancy defectNeutronIrradiationIndium Phosphides ; Radiation Effects ; Thermal Neutrons ; Monocrystals ; Positron Probes ; Lifetime ; Defect StructureExponential decayPositron ProbesDopingRadiochemistryUNESCO::FÍSICANeutron temperatureRadiation EffectschemistryIndium PhosphidesThermal NeutronsLifetimeIndiumdescription
Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals. navarrof@evalvx.ific.uv.es ; Jose.Ferrero@uv.es
year | journal | country | edition | language |
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1996-06-15 | Journal of Applied Physics |