0000000000291513
AUTHOR
Bernabé Marí
Effect of annealing on Zn1−xCoxO thin films prepared by electrodeposition
Polycrystalline thin films of Zn"1"-"xCo"xO with different cobalt (Co) content were grown on indium tin oxide (ITO) substrates by cathodic electrodeposition technique and subsequently annealed in air at 400^oC. The effect of annealing in their structural, optical and chemical properties has been characterized by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman scattering and optical spectroscopy. Our measurements indicate that moderate annealing increases the crystal quality of the films. The films are highly transparent in the visible range and evidence an increase of the band gap and of the intensity of three typical Co absorptio…
Cathodic electrodeposition of ZnCoO thin films
We report on the characterization of ternary Zn1–xCoxO alloy crystalline films grown by electrodeposition onto FTO-coated substrates. The Zn1–xCoxO films have hexagonal wurtzite structure as shown by X-ray diffraction measurements. The Co incorporation into the ZnO lattice is confirmed by the presence of absorption peaks assigned to Co in trigonal crystal field. X-ray photoemission spectroscopy indicates that as-grown films have a considerable concentration of not-fully oxidized metallic Co in the surface that correlates with the O concentration in the surface. Finally, Raman measurements of as-grown films indicate that they are polycrystalline with grains of nanometric size showing short-r…
Optical properties of wurtzite and rock-salt ZnO under pressure
Abstract This paper reports on the pressure dependence of the optical absorption edge of ZnO in the wurtzite and rock-salt phase, up to 14 GPa. Both vapor-phase monocrystals and pulsed-laser-deposition thin films have been investigated. In both types of samples the wurtzite to rock-salt transition is observed at 9.7±0.2 GPa. The absorption tail of the fundamental gap, as measured in monocrystals, exhibits a pressure coefficient of 24.5±2 meV/GPa. The evolution under pressure of the full absorption edge of the wurtzite phase is studied with thin film samples, yielding a slightly lower pressure coefficient (23.0±0.5 meV/GPa for the A–B exciton). Rock-salt ZnO is shown to be an indirect semico…
Optical properties of thin films of ZnO prepared by pulsed laser deposition
In this paper we report on the structural features and optical properties of wurtzite ZnO films epitaxially grown on sapphire, fluorite and mica substrates by means of pulsed laser deposition (PLD). Post-deposition annealing results in a clear improvement of the film quality, reflected by the small width of the exciton-related lines in both the absorption and the photoluminescence spectra. Photoluminescence spectra revealed a multi-line structure which is identified in term of free excitons and excitons complexes with neutral donors and deep centers. The relative intensity of the PL lines mainly depends on the nature of the substrate used. Concerning optoelectronic applications it is especi…
Optical and magnetic properties of ZnCoO thin films synthesized by electrodeposition
Ternary Zn1−xCoxO crystalline films with different compositions were grown by electrodeposition. The Co content in the final compound is linked to the initial Co/Zn ratio in the starting solution. X-ray diffraction reveals a wurtzite structure for the Zn1−xCoxO films. Transmittance spectra show two effects proportional to Co content, a redshift of the absorption edge and three absorption bands, which are both interpreted to be due to the Co incorporated into the ZnO lattice. The amount of deposited charge was used to get a precise control of the film thickness. Magnetic measurements point out that Co(II) ions are isolated from each other, and consequently the films are paramagnetic. Francis…
Structural and Electrochemical Analysis of CIGS: Cr Crystalline Nanopowders and Thin Films Deposited onto ITO Substrates
A new approach for the synthesis of nanopowders and thin films of CuInGaSe2 (CIGS) chalcopyrite material doped with different amounts of Cr is presented. The chalcopyrite material CuInxGa1 − xSe2 was doped using Cr to form a new doped chalcopyrite with the structure CuInxCryGa1 − x − ySe2, where x = 0.4 and y = 0.0, 0.1, 0.2, or 0.3. The electrical properties of CuInx CryGa1 − x − ySe2 are highly dependent on the Cr content and results show these materials as promising dopants for the fabrication thin film solar cells. The CIGS nano-precursor powder was initially synthesized via an autoclave method, and then converted into thin films over transparent substrates. Both crystalline precursor p…
Correlation between optical and transport properties of Ga-doped ZnO thin films prepared by pulsed laser deposition
Abstract In this paper we report on the correlation between the transport and optical properties of Ga-doped ZnO films epitaxially grown on C-oriented sapphire substrates by means of pulsed laser deposition. Thin films with electron concentrations ranging between 10 20 and 10 21 cm −3 were prepared from targets containing 0.25–5 at.% Ga. The Ga content in the thin films was estimated by XPS, from the ratio between the intensities of the 2p peaks of Ga and Zn. The electron concentration in the films is very close to the Ga content for films prepared from low Ga content targets even at high deposition temperature. For Ga contents in the target larger than 1%, the Ga content in the films incr…
Positron lifetime measurements on neutron‐irradiated InP crystals
Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP crystals. navarrof@evalvx.ific.uv.es ; Jose.Ferrero@uv.es